1000MP
0.5 Watts, 20 Volts
Linear to 1000 MHz
GENERAL DESCRIPTION
The 1000MP is a COMMON EMITTER transistor capable of providing 0.5
Watt of Class A, RF output power to 1000 MHz. This transistor is specifically
designed for general Class A amplifier applications. It utilizes gold metalization
and diffused ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55FW-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C
5.3
Maximum Voltage and Current
45
Collector to Base Voltage (BV
ces
)
Emitter to Base Voltage (BV
ebo
)
3.5
Collector Current (I
c
)
300
Maximum Temperatures
Storage Temperature
-40 to +150
Operating Junction Temperature
+200
W
V
V
mA
°C
°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
P
out
P
in
P
g
F
t
VSWR
CHARACTERISTICS
Power Output
Power Input
Power Gain
Transition Frequency
Load Mismatch Tolerance
TEST CONDITIONS
F = 1000 MHz
I
c
= 140 mA
V
cc
= 20 Volts
MIN
0.5
7.0
3.4
TYP
0.8
0.1
9.0
3.7
30:1
MAX
UNITS
W
W
dB
GHz
FUNCTIONAL CHARACTERISTICS @ 25°C
BV
ebo
BV
ces
BV
ceo
h
FE
C
ob
θjc
1
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Capacitance
Thermal Resistance
Ie = 1 mA
Ic = 10 mA
Ic = 10 mA
Vce = 5V, Ic = 100 mA
Vcb = 28V, f =1 MHz
3.5
45
22
20
2.0
3.0
33
V
V
V
pF
°C/W
Note 1: At rated output power
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
1000MP
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
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