If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Above which the useful life may be impaired (Note 1)
−65˚C to +150˚C
Storage Temperature (T
STG
)
Maximum Junction Temperture (T
J
)
Ceramic
+175˚C
−7.0V to +0.5V
Pin Potential to Ground Pin (V
EE
)
Input Voltage (DC)
V
EE
to +0.5V
Output Current (DC Output HIGH)
−50 mA
ESD (Note 2)
≥2000V
Recommended Operating
Conditions
Case Temperature (T
C
)
Military
Supply Voltage (V
EE
)
−55˚C to +125˚C
−5.7V to −4.2V
Note 1:
Absolute maximum ratings are those values beyond which the de-
vice may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 2:
ESD testing conforms to MIL-STD-883, Method 3015.
Military Version
DC Electrical Characteristics
V
EE
= −4.2V to −5.7V, V
CC
= V
CCA
= GND, T
C
= −55˚C to +125˚C (Note 5)
Symbol
V
OH
Parameter
Output HIGH
Voltage
Min
−1025
Typ
Max
−870
Units
mV
T
C
0˚C to
+125˚C
−1085
V
OL
Output LOW Voltage
−1830
−1830
V
OHC
Output HIGH
Voltage
−1085
V
OLC
Output LOW
Voltage
−1555
V
BB
Output Reference
Voltage
−1380
−1396
V
DIFF
V
CM
V
IH
V
IL
I
IH
Input Voltage
Differential
Common Mode
Voltage
Single-Ended
Input High Voltage
Single-Ended
Input Low Voltage
Input HIGH Current
50
70
I
CBO
I
EE
Input Leakage
Current
Power Supply
Current
−65
−25
mA
−10
µA
µA
µA
−1830
−1475
mV
−1165
−870
mV
V
CC
− 2.0
V
CC
− 0.5
V
150
−1260
mV
mV
mV
−1260
mV
mV
−1610
mV
mV
−1035
−870
−1620
−1555
mV
mV
mV
mV
−55˚C
0˚C to
+125˚C
−55˚C
0˚C to
+125˚C
−55˚C
0˚C to
+125˚C
−55˚C
0˚C to
+125˚C
0˚C to
+125˚C
−55˚C
−55˚C to
+125˚C
−55˚C to
+125˚C
−55˚C to
+125˚C
−55˚C to
+125˚C
0˚C to
+125˚C
−55˚C
−55˚C to
+125˚C
−55˚C to
+125˚C
V
IN
= V
EE
, D
a
–D
e
= V
BB
,
D
a
–D
e
= V
IL
D
a
–D
e
= V
IL
(Min)
Conditions
V
IN
= V
IH
(Max)
or V
IL
(Min)
Loading with
50Ω to −2.0V
Notes
(Notes 3, 4, 5)
V
IN
= V
IH
(Max)
or V
IL
(Min)
Loading with
50Ω to −2.0V
(Notes 3, 4, 5)
I
VBB
= 0 µA, V
EE
= 4.2V
I
VBB
= −250 µA, V
EE
= −5.7V
(Notes 3, 4, 5)
(Notes 3, 4, 5)
I
VBB
= −350 µA, V
EE
= −5.7V
Required for Full Output Swing
(Notes 3, 4, 5)
(Notes 3, 4, 5)
Guaranteed HIGH Signal for All
Inputs (with D
n
tied to V
BB
)
Guaranteed LOW Signal for All
Inputs (with D
n
tied to V
BB
)
V
IN
= V
IH
(Max)
,
(Notes 3, 4, 5, 6)
(Notes 3, 4, 5, 6)
D
a
–D
e
= V
BB
,
(Notes 3, 4, 5)
(Notes 3, 4, 5)
(Notes 3, 4, 5)
D
a
–D
e
= V
IL
(Min)
D
a
–D
e
= V
BB
,
(Min)
Note 3:
F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case
condition at cold temperatures.
Note 4:
Screen tested 100% on each device at −55˚C, +25˚C, and +125˚C, Subgroups 1, 2, 3, 7, and 8.
Note 5:
Sample tested (Method 5005, Table I) on each manufactured lot at −55˚C, +25˚C, and +125˚C, Subgroups A1, 2, 3, 7, and 8.
Note 6:
Guaranteed by applying specified input condition and testing V
OH
/V
OL
.
3
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AC Electrical Characteristics
V
EE
= −4.2V to −5.7V, V
CC
= V
CCA
= GND
Symbol
Parameter
T
C
=
−55˚C
Min
t
PLH
t
PHL
t
TLH
t
THL
Propagation Delay
Data to Output
Transition Time
20% to 80%, 80% to 20%
0.20
1.40
0.20
1.40
0.20
1.40
ns
0.40
Max
2.30
T
C
=
+25˚C
Min
0.60
Max
2.20
T
C
=
+125˚C
Min
0.60
Max
2.70
ns
(Notes 7, 8, 9)
Units
Conditions
Notes
Figures 1, 2
(Note 10)
Note 7:
F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately
after power-up. This provides “cold start” specs which can be considered a worst case condition at cold temperatures.
Note 8:
Screen tested 100% on each device at +25˚C temperature only, Subgroup A9.
Note 9:
Sample tested (Method 5005, Table I) on each manufactured lot at +25˚C, Subgroup A9, and at +125˚C and −55˚C temperatures, Subgroups A10 and A11.
Note 10:
Not tested at +25˚C, +125˚C and −55˚C temperature (design characterization data).
