The “Absolute Maximum Ratings” are those values beyond which
the safety of the device cannot be guaranteed. The device should not be
operated at these limits. The parametric values defined in the Electrical
Characteristics tables are not guaranteed at the absolute maximum rating.
The “Recommended Operating Conditions” table will define the conditions
for actual device operation.
Note 2:
ESD testing conforms to MIL-STD-883, Method 3015.
Commercial Version
DC Electrical Characteristics
V
OH
V
OL
V
OHC
V
OLC
V
IH
V
IL
V
CD
I
IH
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Clamp Diode Voltage
Input HIGH Current
Data
Enable
Input HIGH Current
Breakdown Test, All Inputs
I
IL
Input LOW Current
Data
Enable
I
EE
I
TTL
V
EE
Power Supply Current
V
TTL
Power Supply Current
−0.9
−5.4
−70
−45
25
−22
38
mA
mA
All Inputs V
IN
= +4.0V
All Inputs V
IN
=
GND
mA
20
120
1.0
mA
V
IN
= +5.5V,
All Other Inputs
=
GND
V
IN
= +0.4V,
All Other Inputs V
IN
=
V
IH
µA
2.0
0
−1.2
(Note 3)
Conditions
V
IN
=V
IH (Max)
or V
IL (Min)
V
IN
=
V
IH(Min)
or V
IL (Max)
Guaranteed HIGH
Signal for All Inputs
0.8
V
V
Guaranteed LOW
Signal for All Inputs
I
IN
= −18
mA
V
IN
= +2.4V,
All Other Inputs V
IN
=
GND
Loading with
50Ω to
−2.0V
Loading with
50Ω to
−2.0V
V
EE
= −
4.2V to
−
5.7V, V
CC
=
V
CCA
=
GND, T
C
=
0
°
C to
+
85
°
C, V
TTL
= +4.5V
to
+5.5V
Symbol
Parameter
Min
Typ
Max
Units
−1025
−1830
−1035
−1610
5.0
−955
−1705
−870
−1620
mV
mV
V
Note 3:
The specified limits represent the “worst case” value for the parameter. Since these values normally occur at the temperature extremes, additional
noise immunity and guardbanding can be achieved by decreasing the allowable system operating ranges. Conditions for testing shown in the tables are cho-
sen to guarantee operation under “worst case” conditions.
DIP AC Electric Characteristics
V
EE
= −
4.2V to
−
5.7V, V
CC
=
V
CCA
=
GND, V
TTL
= +4.5V
to
+5.5V
T
C
= +25°C
T
C
=
0°C
Symbol
Parameter
Min
Max
Min
Max
t
PLH
t
PHL
t
TLH
t
THL
Propagation Delay
Data and Enable to Output
Transition Time
20% to 80%, 80% to 20%
0.50
0.45
3.00
1.80
0.50
0.45
2.90
1.80
T
C
= +85°C
Min
0.50
0.45
Max
3.00
1.80
Units
ns
ns
Conditions
Figures 1, 2
3
www.fairchildsemi.com
100324
Commercial Version
(Continued)
SOIC and PLCC AC Electrical Characteristics
V
EE
= −
4.2V to
−
5.7V, V
CC
=
V
CCA
=
GND, V
TTL
= +4.5V
to
+5.5V
T
C
=
0°C
T
C
= +25°C
Symbol
Parameter
Min
Max
Min
Max
t
PLH
t
PHL
t
TLH
t
THL
t
OSHL
Propagation Delay
Data and Enable to Output
Transition Time
20% to 80%, 80% to 20%
Maximum Skew Common Edge
Output-to-Output Variation
Data to Output Path
t
OSLH
Maximum Skew Common Edge
Output-to-Output Variation
Data to Output Path
t
OST
Maximum Skew Opposite Edge
Output-to-Output Variation
Data to Output Path
t
PS
Maximum Skew
Pin (Signal) Transition Variation
Data to Output Path
Note 4:
Output-to-Output Skew is defined as the absolute value of the difference between the actual propagation delay for any outputs within the same pack-
aged device. The specifications apply to any outputs switching in the same direction either HIGH-to-LOW (t
大多数读者应该知道Intel 的处理器、TSMC生产的SoC(System on Chip）等逻辑半导体的相关工艺，也明白到这些规则只不过对产品的命名罢了。那么，DRAM中提到的1X（18nm）、1Y（17nm）、1Z（16nm）等又都意味着什么？ 在本文中，我们就此讨论一下所谓的“XXnm”的DRAM的真正意义。那么，所谓“XXnm”指的是哪里的尺寸呢？在谈论这个之前，我们先来聊一下当下...[详细]
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