1014 - 2
2 Watt - 28 Volts, Class C
Microwave 1000 - 1400 MHz
GENERAL DESCRIPTION
The 1014-2 is a COMMON BASE transistor capable of providing 2 Watts of
Class C, RF Output Power over the band 1000-1400 MHz. This transistor is
designed for Microwave Broadband Class C amplifier applications. It includes
Input prematching and utilizes gold metalization and diffused ballasting to
provide high reliagility and supreme ruggedness.
CASE OUTLINE
55LT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
9.7 Watts
50 Volts
3.5 Volts
0.5 A
- 65 to +150
o
C
+200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
η
c
VSWR
1
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
TEST CONDITIONS
F =1000-1400 MHz
Vcb = 28 Volts
As Above
Pout = 2 Watts
MIN
2
0.35
7.5
45
10:1
TYP
MAX
UNITS
Watt
Watt
dB
%
BVces
BVebo
Icbo
h
FE
Cob
θjc
Rev B, Jan 2009
Collector to Emitter Breakdown
Emitter to Base Breakdown
Collector to Base Current
Current Gain
Output Capacitance
Thermal Resistance
Ic = 20 mA
Ie = 5 mA
Vcb = 28 Volts
50
3.5
10
0.5
100
4.5
18
Volts
Volts
mA
o
Vce = 28 V, Ic = 100 mA
Vcb = 25 V, f = 1 MHz
Tc = 25 C
o
pF
C/W
Microsemi reserves the right to change, without notice, the specifications and information contained
herein. Visit our web site at
www.microsemi.com
or contact our factory direct.
