首页 > 器件类别 > 分立半导体 > 晶体管

1214-370M

RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, HERMETIC SEALED, 55ST, 2 PIN

器件类别:分立半导体    晶体管   

厂商名称:ADPOW

厂商官网:http://www.advancedpower.com/

下载文档
1214-370M 在线购买

供应商:

器件:1214-370M

价格:-

最低购买:-

库存:点击查看

点击购买

器件参数
参数名称
属性值
包装说明
FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code
unknown
Is Samacsys
N
其他特性
HIGH RELIABILITY
外壳连接
BASE
最大集电极电流 (IC)
25 A
配置
SINGLE
最高频带
L BAND
JESD-30 代码
R-CDFM-F2
元件数量
1
端子数量
2
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子形式
FLAT
端子位置
DUAL
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
1214-370MR4
.
370 Watts - 50 Volts, 330
µs,
10%
Radar 1200 - 1400 MHz
1214 – 370M
GENERAL DESCRIPTION
The 1214-370M is an internally matched, COMMON BASE transistor
capable of providing 370 Watts of pulsed RF output power at 330
microseconds pulse width, ten percent duty factor across the band 1200 to
1400 MHz. This hermetically solder-sealed transistor is specifically designed
for L-Band radar applications. It utilizes gold metallization and diffused
emitter ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55ST, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
1
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
600 Watts
75 Volts
3.0 Volts
25 Amps
- 65 to + 200
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pg
η
c
Pd
VSWR
1
CHARACTERISTICS
Power Out (Note 2) Pulsed
Power Gain
Collector Efficiency
Pulse Amplitude Droop
Load Mismatch Tolerance
TEST CONDITIONS
F = 1200-1400 MHz
Vcc = 50 Volts,
Pulse Width = 330
µs
Duty = 10 %
As above
F = 1400MHz, Po =370W
MIN
370
8.7
50
9.0
0.5
2:1
TYP
MAX
460
UNITS
Watts
dB
%
dB
** Design Target
Bvces
Ices
Iebo
Hfe
θ
jc
1
Collector to Emitter Breakdown
Collector to Emitter Leakage
Emitter to Base Leakage Current
DC Current Gain
Thermal Resistance
Ic = 40 mA
Vce = 50 Volts
Veb = 3.0 Volts
Vce = 5 V, Ic = 5 A
Rated Pulse Condition
75
10
5
10
45
0.29
o
Volts
mA
mA
C/W
Issue April 2005
Note 1: Pulse width = 330 us, duty = 10%
Note 2: Power Input = 50 Watts Peak Pulsed
APT-RF, Inc. reserves the right to make changes without further notice. APT-RF recommends that before the product(s) described herein are written into
specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory.
APT-RF, Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 TEL. 408-986-8031 FAX 408-869-2324
1214-370MR4
.
1214-370M
1214-370M
Power Out vs Pin
80
Performance Curves
1214-370M
Efficiency vs Power Input
450
400
350
Power Output
300
250
200
150
100
50
0
25
35
40
Power Input
50
63
Pout 1200 MHz
Pout 1300 MHz
Pout 1400 MHz
Efficiency - %
70
60
50
40
30
20
10
0
25
35
40
50
63
Power Input - Watts
1200 MHz
1300 MHz
1400 MHz
1214-370M
Power Gain vs Power Input
10
9.5
Power Gain - dB
9
8.5
8
7.5
7
25
35
40
50
63
Power Input - Watts
1200 MHz
1300 MHz
1400 MHz
Impedance Information
Input
Matching
Circuit
50 Ohms
Z
Source
Z
L o a d
Output
Matching
Circuit
50 Ohms
Freq
1200
1300
1400
Impedance
Zl
Zs
1.75-j2.23
1.52-j2.11
1.75-j1.63
1.36-j1.97
1.76-j1.19
1.13-j1.77
Board Material RT 6010.5 LM 25 Mil
TRL Measurement
APT-RF, Inc. reserves the right to make changes without further notice. APT-RF recommends that before the product(s) described herein are written into
specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory.
APT-RF, Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 TEL. 408-986-8031 FAX 408-869-2324
1214-370MR4
1214-370M
Broadband Test Fixture
APT-RF, Inc. reserves the right to make changes without further notice. APT-RF recommends that before the product(s) described herein are written into
specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory.
APT-RF, Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 TEL. 408-986-8031 FAX 408-869-2324
1214-370MR4
1214-370M
APT-RF, Inc. reserves the right to make changes without further notice. APT-RF recommends that before the product(s) described herein are written into
specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory.
APT-RF, Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 TEL. 408-986-8031 FAX 408-869-2324
查看更多>
有奖直播:恩智浦基于RT06F的人脸识别技术解决方案 报名中!
有奖直播:恩智浦基于RT06F的人脸识别技术解决方案 点击报名 直播时间: ...
橙色凯 RF/无线
一篇关于FFT浅显易懂的文章
傅里叶变换在国内的教材上一向就是一堆公式, 真正需要用的时候,发现自己其实根本不懂。 晚上查看FF...
wstt FPGA/CPLD
新手关于avr的问题,真心求教,函数,编程技巧
谢谢,请看完 毕业后第一次用 avr tiny24 用的这个avr studio 编译软件,好多不懂...
07031529 Microchip MCU
G2553模拟串口驱动12864求高手指点怎么写读取12864里的数据
这是12864头文件部分 注意我用的是模拟串口 不是串行通信 #include MSP4...
tanfeng193 微控制器 MCU
Quartus II 中管脚上拉电阻(弱上拉)的设置方法
在使用 Altera 的 FPGA 时候,根据系统设计需要在管脚的内部加上上拉电阻。 Qu...
wstt FPGA/CPLD
蚂蚁矿机S9控制板原理图
蚂蚁矿机S9控制板原理图 good sechematic good 资料,呵呵呵呵...
littleshrimp EE_FPGA学习乐园
热门器件
热门资源推荐
器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
需要登录后才可以下载。
登录取消