UNISONIC TECHNOLOGIES CO., LTD
13003DF
Preliminary
NPN SILICON TRANSISTOR
NPN SILICON BIPOLAR
TRANSISTORS FOR LOW
FREQUENCY AMPLIFICATION
DESCRIPTION
The UTC
13003DF
is a silicon NPN power switching transistor; it
uses UTC’s advanced technology to provide customers high
collector-base breakdown voltage, low reverse leakage current and
high reliability, etc.
The UTC
13003DF
is suitable for electronic ballast power switch
circuit and the compact electronic energy-saving light.
FEATURES
* High collector-base breakdown voltage
* Low reverse leakage current
* High reliability
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
Lead Free
13003DFL-xx-T60-F-K
13003DFL-xx-T92-A-B
13003DFL-xx-T92-A-K
Note: Pin Assignment: B: Base
13003DFL-T60-F-B
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Lead Free
(1) B: Bluk, K: Bulk
(2) refer to Pin Assignment
(3) T60: TO-126, T92: TO-92
(4) L: Lead Free, G: Halogen Free
Halogen Free
13003DFG-xx-T60-F-K
13003DFG-xx-T92-A-B
13003DFG-xx-T92-A-K
C: Collector
E: Emitter
Package
TO-126
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
E
C
B
E
C
B
Packing
Bulk
Tape Box
Bulk
MARKING
TO-126
TO-92
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Copyright © 2014 Unisonic Technologies Co., Ltd
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13003DF
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise noted)
RATINGS
UNIT
600
V
400
V
9
V
1.5
A
T
A
=25°C
1.25
W
Power Dissipation
P
D
T
C
=25°C
50
W
Junction Temperature
T
J
150
°C
Storage Temperature Range
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise noted)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter-Base Cut-Off Current
DC Current Gain (Note 1)
Low current and high current h
FE2
h
FE1
ratio
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
h
FE
h
FE1
/ h
FE2
TEST CONDITIONS
I
C
=0.1mA
I
C
=1mA
I
E
=0.1mA
V
CB
=600V, I
E
=0
V
CE
=400V, I
B
=0
V
EB
=9V, I
C
=0
V
CE
=5V, I
C
=0.2A
h
FE1
: V
CE
=5V, I
C
=5mA
h
FE2
: V
CE
=5V, I
C
=0.2A
I
C
=1A, I
B
=0.25A
I
C
=1A, I
B
=0.25A
UI9600, I
C
=0.1A
I
C
=0.1A, V
CE
=10V, f=1MHz
5
MIN TYP MAX
600
400
9
0.1
0.1
0.1
15
30
0.75
0.9
0.3
0.9
3
0.9
1.2
5
1
1
V
V
μs
μs
μs
MHz
UNIT
V
V
V
mA
mA
mA
Collector-Emitter Saturation Voltage (Note)
V
CE(SAT)
Base-Emitter Saturation Voltage (Note)
V
BE(SAT)
Storage Time
t
S
Rise Time
t
R
Fall Time
t
F
Transition Frequency
f
T
Note: Pulse test, pulse width tp≤300µs, Duty cycle≤2%
CLASSIFICATION OF h
FE
RANK
RANGE
A
15 ~ 20
B
20 ~ 25
C
25 ~ 30
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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13003DF
Preliminary
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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