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1N4001

1 A, SILICON, SIGNAL DIODE

器件类别:半导体    分立半导体   

厂商名称:Good-Ark

厂商官网:http://www.goodark.com/

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器件:1N4001

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器件参数
参数名称
属性值
端子数量
2
元件数量
1
加工封装描述
MINIATURE PACKAGE-2
状态
ACTIVE
包装形状
包装尺寸
LONG FORM
端子形式
线
端子涂层
NOT SPECIFIED
端子位置
AXIAL
包装材料
UNSPECIFIED
结构
单一的
壳体连接
隔离
二极管元件材料
二极管类型
信号二极管
最大平均正向电流
1 A
文档预览
1N4001 THRU 1N4007
GENERAL PURPOSE PLASTIC RECTIFIER
Reverse Voltage -
50 to 1000 Volts
Forward Current -
1.0 Ampere
Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 /10 seconds, 0.375” (9.5mm) lead length,
5 lbs. (2.3Kg) tension
Mechanical Data
Case:
DO-41 molded plastic body
Terminals:
Plated axial leads, solderable per
MIL-STD-750, method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.012 ounce, 0.33 gram
DIM ENSIONS
DIM
A
B
C
D
inches
Min.
0.165
0.079
0.028
1.000
Max.
0.205
0.106
0.034
-
Min.
4.2
2.0
0.71
25.40
mm
Max.
5.2
2.7
0.86
-
Note
Maximum Ratings and Electrical Characteristics
Ratings at 25
ambient temperature unless otherwise specified.
Symbols
1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=75
Peak forward surge current
8.3mS single half sine-wave superimposed
on rated load (MIL-STD-750D 4066 method) T
A
=75
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
T
A
=25
T
A
=100
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
T
rr
C
J
R
R
JA
JL
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30.0
1.1
5.0
50.0
2.0
15.0
50.0
25.0
+150
-50 to +175
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amp
Amps
Volts
A
S
¦ÑF
/W
Typical reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Typical thermal resistance (Note 3)
Maximum DC blocking voltage temperature
Operating junction and storage temperature range
T
A
T
J
, T
STG
Notes:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0MHz and applied reverse voltage of 4.0 volts
(3) Thermal resistance from junction to ambient and from junction to lead at 0.375” (9.5mm) lead length, P.C.B. mounted
1
RATINGS AND CHARACTERISTIC CURVES
2
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参数对比
与1N4001相近的元器件有:1N4003、1N4004、1N4005、1N4006。描述及对比如下:
型号 1N4001 1N4003 1N4004 1N4005 1N4006
描述 1 A, SILICON, SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
端子数量 2 2 2 2 2
元件数量 1 1 1 1 1
加工封装描述 MINIATURE PACKAGE-2 ALF-2, DO-41, 2 PIN CASE R-1, 2 PIN 塑料 PACKAGE-2 ROHS COMPLIANT, PLASTIC, DO-204AL, 2 PIN
状态 ACTIVE TRANSFERRED ACTIVE ACTIVE ACTIVE
包装形状 ROUND
包装尺寸 LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
端子形式 线 线 线 线 WIRE
端子位置 AXIAL AXIAL AXIAL AXIAL AXIAL
包装材料 UNSPECIFIED 玻璃 UNSPECIFIED 塑料/环氧树脂 PLASTIC/EPOXY
结构 单一的 单一的 单一的 单一的 SINGLE
壳体连接 隔离 隔离 隔离 隔离 ISOLATED
二极管元件材料 SILICON
二极管类型 信号二极管 信号二极管 信号二极管 信号二极管 SIGNAL DIODE
最大平均正向电流 1 A 1 A 1 A 1 A 1 A
端子涂层 NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED
最大重复峰值反向电压 - - 400 V 600 V 800 V
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