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1N4002S

1 A, 100 V, SILICON, SIGNAL DIODE

器件类别:半导体    分立半导体   

厂商名称:Transys Electronics Limited

厂商官网:http://www.transyselectronics.com

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1N4001S THRU 1N4007S
PLASTIC SILICON RECTIFIER
VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere
FEATURES
l
l
l
l
l
l
Low forward voltage drop
High current capability
High reliability
High surge current capability
0.6mm leads
Exceeds environmental standards of MIL-S-19500/228
A-405
MECHANICAL DATA
Case: Molded plastic , A-405
Epoxy: UL 94V-O rate flame retardant
Lead: Axial leads, solderable per MIL-STD-202,
method 208 guaranteed
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.008 ounce, 0.22 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1N4001S 1N4002S 1N4003S 1N4004S 1N4005S 1N4006S 1N4007S
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current @T
A
=75
Peak Forward Surge Current 8.3ms single
half sine-wave I
FSM
superimposed on rated
load
Maximum Forward Voltage at 1.0A DC
Maximum DC Reverse Current @T
A
=25
At Rated DC Blocking Voltage @T
A
=100
Typical Junction capacitance (Note 1)
Typical Thermal Resistance (Note 2) R JA
Typical Thermal resistance (NOTE 2) R JL
Operating Temperature Range T
J
Storage Temperature Range T
A
50
35
50
100
75
100
200
140
200
400
280
400
1.0
30
600
420
600
800
560
800
1000
700
1000
UNITS
V
V
V
A
A
1.1
5.0
500
15
50
25
-55 to +150
-55 to +150
V
A
A
P
F
/W
/W
NOTES:
1.
Measured at 1 MHz and applied reverse voltage of 4.0 VDC
Thermal resistance Junction to Ambient and from junction to lead at 0.375"(9.5mm) lead length P.C.B mounted
2.
RATING AND CHARACTERISTIC CURVES
1N4001S THRU 1N4007S
Fig. 1-TYPICAL FORWARD CURRENT DERATING CURVE
Fig. 2-TYPICAL FORWARD CHARACTERISTICS
Fig. 3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
Fig. 4-TYPICAL REVERSE CHARACTERISTICS
Fig. 5-TYPICAL REVERSE CHARACTERISTICS
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参数对比
与1N4002S相近的元器件有:1N4001S、1N4003S、1N4004S、1N4005S、1N4006S、1N4007S。描述及对比如下:
型号 1N4002S 1N4001S 1N4003S 1N4004S 1N4005S 1N4006S 1N4007S
描述 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE
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器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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