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1N4006S

1 A, SILICON, SIGNAL DIODE

器件类别：分立半导体    二极管   

厂商名称：DIOTEC

厂商官网：http://www.diotec.com/

器件标准：

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器件：1N4006S

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
DIOTEC
Reach Compliance Code
compli
ECCN代码
EAR99
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
O-PALF-W2
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-50 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度（摄氏度）
NOT SPECIFIED
最大重复峰值反向电压
800 V
最大反向恢复时间
1.5 µs
表面贴装
NO
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
1N4001S THRU 1N4007S
Reverse Voltage - 50 to 1000 Volts
GENERAL PURPOSE SILICON RECTIFIER
Forward Current - 1.0 Ampere
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
●
Construction utilizes void-free
molded plastic technique
●
Low reverse leakage
●
High forward surge current capability
●
High temperature soldering guaranteed:
250 C/10 seconds,0.375
”
(9.5mm) lead length,
5 lbs. (2.3kg) tension
●
A-405
0.107(2.7)
0.080(2.0)
DIA.
1.0(25.4)
MIN.
0.205(5.2)
0.166(4.2)
MECHANICAL DATA
Case
: JEDEC A-405 molded plastic body
Terminals
: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity
: Color band denotes cathode end
Mounting Position
: Any
Weight
:0.008 ounce, 0.23 grams
0.025(0.6)
0.021(0.5)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375
”
(9.5mm) lead length at T
A
=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
SYMBOLS
1N
1N
1N
1N
1N
1N
1N
4001S 4002S 4003S 4004S 4005S 4006S 4007S
UNITS
V
V
V
A
A
V
µA
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
R
JA
T
J
,
T
STG
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30.0
1.1
5.0
50.0
600
420
600
800
560
800
1000
700
1000
15.0
50.0
-65 to +150
pF
C/W
C
Note:
1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375
”
(9.5mm)lead length,P.C.B. mounted
1N4001S THRU 1N4007S
RATINGS AND CHARACTERISTIC CURVES
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
FIG. 1- FORWARD CURRENT DERATING CURVE
PEAK FORWARD SURGE CURRENT,
AMPERES
1.0
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
0.8
25
0.6
20
0.4
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
15
0.2
10
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
0
25
50
75
100
125
150
175
5.0
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
INSTANTANEOUS FORWARD
CURRENT,AMPERES
10
100
TJ=150 C
1
10
TJ=100 C
1
0.1
T
J
=25 C
PULSE WIDTH=300
ms
1%DUTY CYCLE
0.01
0.1
TJ=25 C
0.01
0.6
0.8
1.0
1.2
1.4
1.5
INSTANTANEOUS FORWARD VOLEAGE,
VOLTS
0
20
40
60
80
100
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
TRANSIENT THERMAL IMPEDANCE,
C/W
200
100
T
J
=25 C
100
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
JUNCTION CAPACITANCE, pF
10
10
1
0.1
1
0.01
0.1
1
10
100
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
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参数对比
与1N4006S相近的元器件有：1N4002S、1N4001S、1N4007S、1N4005S、1N4003S、1N4004S。描述及对比如下：
型号 1N4006S 1N4002S 1N4001S 1N4007S 1N4005S 1N4003S 1N4004S
描述 1 A, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合
Reach Compliance Code compli compli compliant compli compli compli compli
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
元件数量 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -50 °C -50 °C -50 °C -50 °C -50 °C -50 °C -50 °C
最大输出电流 1 A 1 A 1 A 1 A 1 A 1 A 1 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
最大重复峰值反向电压 800 V 100 V 50 V 1000 V 600 V 200 V 400 V
最大反向恢复时间 1.5 µs 1.5 µs 1.5 µs 1.5 µs 1.5 µs 1.5 µs 1.5 µs
表面贴装 NO NO NO NO NO NO NO
端子形式 WIRE WIRE WIRE WIRE WIRE WIRE WIRE
端子位置 AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
厂商名称 DIOTEC DIOTEC - DIOTEC DIOTEC DIOTEC DIOTEC
ECCN代码 EAR99 EAR99 EAR99 - EAR99 EAR99 -
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器件捷径:
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