1N5400 thru 1N5408
Vishay General Semiconductor
General Purpose Plastic Rectifier
FEATURES
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DO-201AD
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes application.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
J
max.
3.0 A
50 V to 1000 V
200 A
5.0 μA
1.2 V
150 °C
Note
• These devices are not AEC-Q101 qualified.
MECHANICAL DATA
Case:
DO-201AD, molded epoxy body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak
reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
rectified current 0.5" (12.5 mm)
lead length at T
L
= 105 °C
Peak forward surge current
8.3 ms single half sine-wave
superimposed on rated load
Maximum full load reverse
current, full cycle average
0.5" (12.5 mm) lead length
at T
L
= 105 °C
Operating junction and
storage temperature range
SYMBOL 1N5400 1N5401 1N5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
300
210
300
400
280
400
3.0
500
350
500
600
420
600
800
560
800
1000
700
1000
V
V
V
A
I
FSM
200
A
I
R(AV)
500
μA
T
J
, T
STG
- 50 to + 150
°C
Document Number: 88516
Revision: 04-Nov-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
1N5400 thru 1N5408
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum
instantaneous
forward voltage
Maximum DC
reverse current
at rated DC
blocking voltage
Typical junction
capacitance
TEST
SYMBOL 1N5400 1N5401 1N5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 UNIT
CONDITIONS
3.0 A
V
F
1.2
V
T
A
= 25 °C
I
R
T
A
= 150 °C
4.0 V, 1 MHz
C
J
5.0
μA
500
30
pF
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL 1N5400 1N5401 1N5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 UNIT
R
θJA
(1)
20
°C/W
Note
(1)
Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted with 0.8" x 0.8" (20 mm x 20 mm) copper
heatsinks
ORDERING INFORMATION
(Example)
PREFERRED P/N
1N5404-E3/54
1N5404-E3/73
UNIT WEIGHT (g)
1.1
1.1
PREFERRED PACKAGE CODE
54
73
BASE QUANTITY
1400
1000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Average Forward Rectified Current (A)
L
=
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
40
L=
0.
0.3
1
"
25
"
(
(7.
6.
4
9m
m
m)
m
)
L=
T
L
= Lead Temp.
with Both Leads Heat
Sink
Mounted with
Length (L) as
shown
60 Hz Resistive
or Inductive Load
Instantaneous Forward
Surge
Current (A)
8.0
1000
T
L
= 105 °C
8.3 ms
Single
Half
Sine-Wave
1.0 Cycle
0.5
0
"
(12
.7 m
m)
100
T
A
= Ambient Temperature
0.375" (9.5 mm) Lead Length
P.C.B. Mounted
60
80
100
120
140
160
180
10
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 88516
Revision: 04-Nov-09
1N5400 thru 1N5408
Vishay General Semiconductor
100
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Instantaneous Forward Current (A)
10
T
J
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
1
Junction Capacitance (pF)
10
0.1
0.01
0.4
1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
100
10
T
J
= 150 °C
Transient Thermal Impedance (°C/W)
80
100
Instantaneous Reverse Current (μA)
10
1
T
J
= 100 °C
1
0.1
T
J
= 25 °C
0.01
0
20
40
60
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-201AD
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.052 (1.32)
0.048 (1.22)
DIA.
Document Number: 88516
Revision: 04-Nov-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
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Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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