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1N5820-T

肖特基(二极管与整流器) Vr/20v Io/3A T/R

器件类别:分立半导体    二极管   

厂商名称:Rectron Semiconductor

厂商官网:http://www.rectron.com/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Rectron Semiconductor
零件包装代码
DO-201AD
包装说明
O-PALF-W2
针数
2
Reach Compliance Code
not_compliant
ECCN代码
EAR99
Is Samacsys
N
其他特性
HIGH RELIABILITY, LOW NOISE
应用
GENERAL PURPOSE
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-201AD
JESD-30 代码
O-PALF-W2
JESD-609代码
e3
最大非重复峰值正向电流
80 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最大输出电流
3 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
265
认证状态
Not Qualified
最大重复峰值反向电压
20 V
表面贴装
NO
技术
SCHOTTKY
端子面层
Matte Tin (Sn)
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE 20 to 40 Volts CURRENT 3.0 Ampere
FEATURES
*
*
*
*
*
*
*
*
*
*
*
Low switching noise
Low forward voltage drop
High current capability
High switching capabitity
High surge capabitity
High reliability
Case: Molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 1.18 grams
1N5820
THRU
1N5822
DO-201AD
MECHANICAL DATA
.052 (1.3)
1.0 (25.4)
MIN.
.048 (1.2)
DIA.
.375 (9.5)
.335 (8.5)
.220 (5.6)
.197 (5.0)
DIA.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(@ T
A
=25
O
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375” (9.5mm) lead length at T
L
=95
O
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 3)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
ELECTRICAL CHARACTERISTICS
(@T
A
=25
O
C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 3.0A DC
Maximum Instantaneous Forward Voltage at 9.4A DC
Maximum Average Reverse Current
at Rated DC Blocking Voltage (Note 4)
@T
A
= 25 C
@T
A
= 100 C
o
o
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
qJA
R
qJL
C
J
T
J
T
STG
1N5820
20
14
20
1N5821
30
21
30
3.0
80
40
10
250
150
-55 to + 150
1N5822
40
28
40
UNITS
Volts
Volts
Volts
Amps
Amps
0
C/W
pF
0
0
C
C
SYMBOL
V
F
V
F
I
R
1N5820
.475
.850
1N5821
.500
.900
0.2
10
1N5822
.525
.950
UNITS
Volts
Volts
mAmps
mAmps
2006-11
REV:B
NOTES : 1. Measured at 1 MHz and applied reverse voltage of 4.0 volts.
2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
3. Thermal Resistance : At 9.5mm lead lengths, PCB mounted.
4. Measured at Pulse Width 300mS,Duty 2%.
RATING AND CHARACTERISTICS CURVES ( 1N5820 THRU 1N5822 )
INSTANTANEOUS FORWARD CURRENT, (A)
4
AVERAGE FORWARD CURRENT, (A)
20
10
3
2
Single
Half Wave 60HZ
Resistive or
Inductive Load
0.375" (9.5mm) Lead Length
1.0
1N5820
1N5821
1N5822
1
0
0
25
50
75
100
O
125
150
175
0.1
T
J
= 25
O
C
Pulse Width = 300mS
1% Duty Cycle
0.1
0.3
0.5
0.7
0.9
1.1
1.3 1.5
1.7
1.9
2.1
LEAD TEMPERATURE, ( C)
INSTANTANEOUS FORWARD VOLTAGE, (V)
INSTANTANEOUS REVERSE CURRENT, (mA)
100
FIG.1 TYPICAL FORWARD CURRENT
DERATING CURVE
C
T
, TOTAL CAPACITANCE, (pF)
400
200
100
80
60
40
20
10
FIG.2 TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
T
J
= 25
O
C
10
T
A
= 125
O
C
1.0
T
A
= 75
O
C
0.1
T
A
= 25
O
C
1N5820
1N5821~1N5822
0.01
0
20
40
60
80
100
120
140
0.1
0.4
1.0
4
10
40
80
PERCENT RATED PEAK REVERSE VOLTAGE, (%)
REVERSE VOLTAGE, (V)
FIG.3 TYPICAL REVERSE CHARACTERISTICS
PEAK FORWARD SURGE CURRENT, (A)
FIG.4 TYPICAL JUNCTION CAPACITANCE
T
L
= 75
O
C
8.3mS Single Half Sine-Wave
JEDEC Method
100
80
60
40
20
0
1
2
4
6
8
10
20
40
80 100
NUMBER OF CYCLES AT 60Hz
FIG.5 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
Rectron products are not designed, intended or authorized for use in medical,
life-saving implant or other applications intended for life-sustaining or other rela-
ted applications where a failure or malfunction of component or circuitry may di-
rectly or indirectly cause injury or threaten a life without expressed written appr-
oval of Rectron Inc. Customers using or selling Rectron components for use in
such applications do so at their own risk and shall agree to fully indemnify Rect-
ron Inc and its subsidiaries harmless against all claims, damages and expendit-
ures.
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参数对比
与1N5820-T相近的元器件有:ES2F、1N5821-B、1N5821-T、1N5820-B。描述及对比如下:
型号 1N5820-T ES2F 1N5821-B 1N5821-T 1N5820-B
描述 肖特基(二极管与整流器) Vr/20v Io/3A T/R SURFACE MOUNT SUPERFAST RECTIFIER 肖特基(二极管与整流器) Vr/30v Io/3A bulk 肖特基(二极管与整流器) Vr/30v Io/3A T/R 肖特基(二极管与整流器) Vr/20v Io/3A bulk
是否无铅 不含铅 - 不含铅 不含铅 不含铅
是否Rohs认证 符合 - 符合 符合 符合
厂商名称 Rectron Semiconductor - Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor
零件包装代码 DO-201AD - DO-201AD DO-201AD DO-201AD
包装说明 O-PALF-W2 - O-PALF-W2 O-PALF-W2 O-PALF-W2
针数 2 - 2 2 2
Reach Compliance Code not_compliant - not_compliant not_compliant not_compliant
ECCN代码 EAR99 - EAR99 EAR99 EAR99
Is Samacsys N - N N N
其他特性 HIGH RELIABILITY, LOW NOISE - HIGH RELIABILITY, LOW NOISE HIGH RELIABILITY, LOW NOISE HIGH RELIABILITY, LOW NOISE
应用 GENERAL PURPOSE - GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
外壳连接 ISOLATED - ISOLATED ISOLATED ISOLATED
配置 SINGLE - SINGLE SINGLE SINGLE
二极管元件材料 SILICON - SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95代码 DO-201AD - DO-201AD DO-201AD DO-201AD
JESD-30 代码 O-PALF-W2 - O-PALF-W2 O-PALF-W2 O-PALF-W2
JESD-609代码 e3 - e3 e3 e3
最大非重复峰值正向电流 80 A - 80 A 80 A 80 A
元件数量 1 - 1 1 1
相数 1 - 1 1 1
端子数量 2 - 2 2 2
最高工作温度 150 °C - 150 °C 150 °C 150 °C
最大输出电流 3 A - 3 A 3 A 3 A
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND - ROUND ROUND ROUND
封装形式 LONG FORM - LONG FORM LONG FORM LONG FORM
峰值回流温度(摄氏度) 265 - 265 265 265
认证状态 Not Qualified - Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 20 V - 30 V 30 V 20 V
表面贴装 NO - NO NO NO
技术 SCHOTTKY - SCHOTTKY SCHOTTKY SCHOTTKY
端子面层 Matte Tin (Sn) - Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
端子形式 WIRE - WIRE WIRE WIRE
端子位置 AXIAL - AXIAL AXIAL AXIAL
处于峰值回流温度下的最长时间 NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 - 1 1 1
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