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1N6466US

Zener Diodes T DAP UNI 500W 40.3V

器件类别:分立半导体    二极管   

厂商名称:SEMTECH

厂商官网:http://www.semtech.com

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器件:1N6466US

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
包装说明
O-LELF-N2
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
Is Samacsys
N
其他特性
HIGH RELIABILITY
最小击穿电压
33 V
最大钳位电压
47.5 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
O-LELF-N2
JESD-609代码
e0
元件数量
1
端子数量
2
封装主体材料
GLASS
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
3 W
认证状态
Not Qualified
最大重复峰值反向电压
30.5 V
表面贴装
YES
技术
AVALANCHE
端子面层
TIN LEAD
端子形式
NO LEAD
端子位置
END
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
1N6461US THRU 1N6468US
QPL 500 Watt Surface Mount TVS
POWER DISCRETES
Description
The 1N64xx series of transient voltage suppressors are
designed to protect military and commercial electronic
equipment from overvoltages caused by lightning, ESD,
EFT, inductive load switching, and EMP. These devices
are constructed using a p-n junction TVS diode in a
hermetically sealed, voidless glass package. The
hermetically sealed package provides high reliability in
harsh environmental conditions. TVS diodes are further
characterized by their high surge capability, low operating
and clamping voltages, and a theoretically instantaneous
response time. This makes them ideal for use as board
level protection for sensitive semiconductor components.
These devices are DESC QPL qualified to MIL-S-19500/
551.
Features
500 Watts peak pulse power (tp = 10/1000µs)
Voidless hermetically sealed glass package
Metallurgically bonded
High surge capacity
Unidirectional
Available in JTX, and JTXV versions per
MIL-S-19500/551
Applications
Aerospace and industrial electronics
Board level protection
Airborne systems
Shipboard systems
Ground systems
Mechanical Characteristics
Hermetically sealed glass package
Absolute Maximum Ratings
Rating
Peak Pulse Power (tp = 10 x 1000µs)
Storage Temperature Range
Steady-State Power Dissipation @ TL = 75°C (3/8")
Symbol
P pk
T
STG
PD
Value
500
-65 to +175
3
Units
Watts
°C
Watts
Revision: August 8, 2007
1
www.semtech.com
1N6461US THRU 1N6468US
POWER DISCRETES
Electrical Characteristics
Electrical specifications @ T
A
= 25°C unless otherwise specified.
Device
Type
Reverse
Standoff
Voltage
V
RWM
V
Reverse
L eakag e
Current
I
R
µA
3000
2500
500
500
50
3
2
2
Minimum
Breakdow n
Voltage
V
BR
@ I
T
V
5.6
6.5
13.6
16.4
27.0
33.0
43.7
54.0
Test
Current
I
T
mA
25
20
5
5
2
1
1
1
Maximum
Clamping
Voltage
V
C
@ I
PP
V
9.0
11.0
22.6
26.5
41.4
47.5
63.5
78.5
Peak Pulse
Current
I
PP
T
P
= 1mS
A
56
46
22
19
12
11
8
6
Peak Pulse
Current
I
PP
T
P
= 20µS
A
315
258
125
107
69
63
45
35
Temp.
Coef.
of V
BR
α
V
Z
% / °C
0.040
0.040
0.050
0.060
0.084
0.093
0.094
0.096
1N6461US
1N6462US
1N6463US
1N6464US
1N6465US
1N6466US
1N6467US
1N6468US
5
6
12
15
24
30.5
40.3
51.6
2007 Semtech Corp.
2
www.semtech.com
1N6461US THRU 1N6468US
POWER DISCRETES
Electrical Characteristics
PEAK PULSE POWER vs. PULSE TIME
10 x 1000
µs IMPULSE WAVEFORM
STEADY STATE DERATING CHARACTERISTICS
FOR FREE AIR MOUNTING
PULSE DERATING CURVE
2007 Semtech Corp.
3
www.semtech.com
1N6461US THRU 1N6468US
POWER DISCRETES
Ordering Information
Part Number
1N6461US,
1N6462US,
1N6463US,
1N6464US,
1N6465US,
1N6466US,
1N6467US,
1N6468US
Description
Surface Mount (US)
(1)
Note:
(1) Available in trays and tape and reel packaging. Please
consult factory for quantities.
Outline Drawing
B
D
C
A
D
Dimensions
1N 6461U S - 1N 6468U S
Inches
MIN
A
B
C
D
0.200
0.019
0.003
0.137
MAX
0.225
0.028
-
0.148
Millimeters
MIN
5.08
0.48
0.08
3.48
MAX
5.72
0.71
-
3.76
Notes:
(1) Dimensions are in inches.
(2) Metric equivalents are given for general information only.
Contact Information
Semtech Corporation
Power Discretes Products Division
200 Flynn Road, Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
2007 Semtech Corp.
4
www.semtech.com
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参数对比
与1N6466US相近的元器件有:1N6462US、1N6463US。描述及对比如下:
型号 1N6466US 1N6462US 1N6463US
描述 Zener Diodes T DAP UNI 500W 40.3V Zener Diodes T DAP UNI 500W 6V Zener Diodes T UNI 500W 12V
是否无铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合
包装说明 O-LELF-N2 O-LELF-N2 O-LELF-N2
针数 2 2 2
Reach Compliance Code unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99
Is Samacsys N N N
其他特性 HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
最小击穿电压 33 V 6.5 V 13.6 V
最大钳位电压 47.5 V 11 V 22.6 V
配置 SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码 O-LELF-N2 O-LELF-N2 O-LELF-N2
JESD-609代码 e0 e0 e0
元件数量 1 1 1
端子数量 2 2 2
封装主体材料 GLASS GLASS GLASS
封装形状 ROUND ROUND ROUND
封装形式 LONG FORM LONG FORM LONG FORM
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性 UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
最大功率耗散 3 W 3 W 3 W
认证状态 Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 30.5 V 6 V 12 V
表面贴装 YES YES YES
技术 AVALANCHE AVALANCHE AVALANCHE
端子面层 TIN LEAD TIN LEAD TIN LEAD
端子形式 NO LEAD NO LEAD NO LEAD
端子位置 END END END
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1
厂商名称 - SEMTECH SEMTECH
Factory Lead Time - 17 weeks 17 weeks
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