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200CNQ035

100 A, 35 V, SILICON, RECTIFIER DIODE

器件类别:分立半导体    二极管   

厂商名称:International Rectifier ( Infineon )

厂商官网:http://www.irf.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
International Rectifier ( Infineon )
零件包装代码
TO-244AB
包装说明
R-PUFM-X2
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
HIGH RELIABILITY, FREE WHEELING DIODE
应用
GENERAL PURPOSE
外壳连接
CATHODE
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.49 V
JEDEC-95代码
TO-244AB
JESD-30 代码
R-PUFM-X2
JESD-609代码
e0
最大非重复峰值正向电流
26000 A
元件数量
2
相数
1
端子数量
2
最高工作温度
150 °C
最大输出电流
100 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
35 V
最大反向电流
400000 µA
表面贴装
NO
技术
SCHOTTKY
端子面层
TIN LEAD
端子形式
UNSPECIFIED
端子位置
UPPER
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
Bulletin PD-2.257 rev. D 07/01
200CNQ... SERIES
SCHOTTKY RECTIFIER
200 Amp
TO-244AB
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
range
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 100Apk, T
J
=125°C
(per leg)
range
Description/Features
The 200CNQ center tap Schottky rectifier module series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable opera-
tion up to 150 °C junction temperature. Typical applications
are in high current switching power supplies, plating power
supplies, UPS systems, converters, free-wheeling diodes,
welding, and reverse battery protection.
150 °C T
J
operation
Center tap module
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
10.41 [.410]
9.65 [.380]
200CNQ... Units
200
35 to 45
26,000
0.49
- 55 to 150
A
V
A
V
°C
80.01 [3.150]
40.26 [1.585]
39.75 [1.565]
COMMON
CATHODE
Ø
20.32 [.800]
17.78 [.700]
LUG
TERMINAL
ANODE 1
LUG
TERMINAL
ANODE 2
2X Ø
7.49 [.295]
6.99 [.275]
34.925 [1.375]
REF.
63.50 [2.500]
60.96 [2.400]
Ø
4.95 [.195]
4.70 [.185]
1/4-20 SLOTTED HEX
BASE
COMMON CATHODE
23.55 [.927]
20.42 [.804]
15.75 [.620]
14.99 [.590]
3.35 [.132]
3.02 [.119]
92.71 [3.650]
90.17 [3.550]
NOTES:
1. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
2. CONTROLLING DIMENSION: MILLIMETER
Modified JEDEC
Outline TO-244AB
Dimensions in millimeters and (inches)
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1
200CNQ... Series
Bulletin PD-2.257 rev. D 07/01
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
200CNQ035
35
200CNQ040
40
200CNQ045
45
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward
Current
I
FSM
E
AS
I
AR
* See Fig. 5
(Per Leg)
(Per Device)
200CNQ Units
100
200
26,000
1550
135
20
A
mJ
A
A
Conditions
50% duty cycle @ T
C
= 114 °C, rectangular wave form
Following any rated
load condition and with
10ms Sine or 6ms Rect. pulse rated V
RRM
applied
5µs Sine or 3µs Rect. pulse
T
J
= 25 °C, I
AS
= 20 Amps, L = 0.67 mH
Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Max. Peak One Cycle Non-Repetitive
Surge Current (Per Leg) * See Fig. 7
Non-Repetitive Avalanche Energy
(Per Leg)
Repetitive Avalanche Current
(Per Leg)
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
(Per Leg) * See Fig. 1
(1)
200CNQ Units
0.54
0.68
0.49
0.64
10
500
0.32
0.81
5200
7.0
10000
V
V
V
V
mA
mA
V
mΩ
pF
@ 100A
@ 200A
@ 100A
Conditions
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
I
RM
V
F(TO)
r
t
C
T
Max. Reverse Leakage Current
(Per Leg) * See Fig. 2
Threshold Voltage
Forward Slope Resistance
Max. Junction Capacitance (Per Leg)
(1)
@ 200A
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
max.
V
R
= 5V
DC
, (test signal range 100Khz to 1Mhz) 25°C
L
S
Typical Series Inductance (Per Leg)
dv/dt Max. Voltage Rate of Change
(Rated V
R
)
nH From top of terminal hole to mounting plane
V/ µs
(1) Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
200CNQ Units
- 55 to 150
- 55 to 150
0.40
0.20
0.10
79 (2.80)
Min.
Max.
Typ.
Min.
Max.
°C
°C
Conditions
R
thJC
Max. Thermal Resistance Junction
to Case (Per Leg)
R
thJC
Max. Thermal Resistance Junction
to Case (Per Package)
R
thCS
Typical Thermal Resistance, Case
to Heatsink
wt
T
Approximate Weight
Mounting Torque Base
Mounting Torque Center Hole
Terminal Torque
Case Style
°C/W DC operation
°C/W DC operation
* See Fig. 4
°C/W Mounting surface , smooth and greased
g (oz.)
24 (20)
35 (30)
Kg-cm
13.5 (12) (Ibf-in)
35 (30)
46 (40)
TO - 244AB
Modified JEDEC
2
www.irf.com
200CNQ... Series
Bulletin PD-2.257 rev. D 07/01
10 0 0
10 0 00
1 0 00
10 0
10
75 C
1
0.1
0 .01
0
5
10
15
20
25
30
35
40
45
Reverse V olta ge - V
R
(V )
T
J
= 150 C
T
J
= 125 C
Reverse C urrent - I
R
(m A)
T
J
= 150 C
125 C
100 C
50 C
25 C
In st a ntaneous Fo rw ard C urre nt - I
F
(A)
1 00
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage (Per Leg)
1 0 00 0
Junction C ap acita nce - C
T
(pF)
T
J
= 25 C
10
T
J
= 25 C
1
0
0.2
0.4
0.6
0.8
1
Forw a rd V olta g e D rop - V
FM
(V )
10 0 0
0
10
20
30
40
50
Reverse V olta ge - V
R
(V )
Fig. 1 - Max. Forward Voltage Drop Characteristics
(Per Leg)
1
Therm al Im pedance Z
thJC
( C /W )
D
D
D
D
D
=
=
=
=
=
0 .7 5
0 .5 0
0 .3 3
0 .2 5
0 .2 0
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage (Per Leg)
0.1
P
D M
0 .01
Sin g le Pu lse
(Therm a l R e sista n ce )
Notes:
t1
t2
1. D uty factor D = t 1 / t 2
2. Peak T
J
= P
D M
x Z
thJC
+ T
C
0.0 01
0 .0 0 00 1
0 .0 0 01
0 .00 1
0.0 1
0 .1
1
10
t 1 , R ec ta n g u la r P ulse Du ra tio n (Se co n d s)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics (Per Leg)
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3
200CNQ... Series
Bulletin PD-2.257 rev. D 07/01
16 0
Allow ab le C ase Tem pera ture - ( C )
15 0
14 0
13 0
12 0
11 0
10 0
90
80
70
60
0
30
60
90
1 20
15 0
Averag e Forw ard C urrent - I
F(AV )
(A )
see note (2)
80
A vera ge Pow er Loss - (W atts)
70
60
50
40
30
20
10
0
0
30
60
90
12 0
15 0
A vera ge Forw ard C urren t - I
F(AV)
(A)
D
D
D
D
D
=
=
=
=
=
0.20
0.25
0.33
0.50
0.75
DC
DC
RM S Lim it
Squa re w ave (D = 0.50)
80% Ra ted V
R
a pp lied
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current (Per Leg)
100000
Non-Re pet itive S urge C urren t - I
FSM
(A)
At An y Rated Load C ond ition
An d W ith Rated V
Ap plied
RRM
Follow in g Surg e
Fig. 6 - Forward Power Loss Characteristics
(Per Leg)
10000
1000
10
100
1000
10000
Squa re W a ve Pulse D ura tion - t p (m icrosec)
Fig. 7 - Max. Non-Repetitive Surge Current (Per Leg)
L
H IG H -SPE ED
SW ITC H
FREE-W HE EL
D IO D E
40H FL40S02
V d = 25 V olt
D UT
IRFP460
Rg = 25 ohm
+
C UR RE N T
M O N ITO R
Fig. 8 - Unclamped Inductive Test Circuit
(2)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
4
www.irf.com
200CNQ... Series
Bulletin PD-2.257 rev. D 07/01
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 07/01
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参数对比
与200CNQ035相近的元器件有:200CNQ、200CNQ040、200CNQ045。描述及对比如下:
型号 200CNQ035 200CNQ 200CNQ040 200CNQ045
描述 100 A, 35 V, SILICON, RECTIFIER DIODE 100 A, 35 V, SILICON, RECTIFIER DIODE 100 A, 40 V, SILICON, RECTIFIER DIODE 100 A, 45 V, SILICON, RECTIFIER DIODE, TO-244AB
是否Rohs认证 不符合 - 不符合 不符合
厂商名称 International Rectifier ( Infineon ) - International Rectifier ( Infineon ) International Rectifier ( Infineon )
零件包装代码 TO-244AB - TO-244AB TO-244AB
包装说明 R-PUFM-X2 - R-PUFM-X2 R-PUFM-X2
针数 3 - 3 3
Reach Compliance Code compliant - unknown compliant
ECCN代码 EAR99 - EAR99 EAR99
其他特性 HIGH RELIABILITY, FREE WHEELING DIODE - HIGH RELIABILITY, FREE WHEELING DIODE HIGH RELIABILITY, FREE WHEELING DIODE
应用 GENERAL PURPOSE - GENERAL PURPOSE GENERAL PURPOSE
外壳连接 CATHODE - CATHODE CATHODE
配置 COMMON CATHODE, 2 ELEMENTS - COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
二极管元件材料 SILICON - SILICON SILICON
二极管类型 RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 0.49 V - 0.49 V 0.49 V
JEDEC-95代码 TO-244AB - TO-244AB TO-244AB
JESD-30 代码 R-PUFM-X2 - R-PUFM-X2 R-PUFM-X2
最大非重复峰值正向电流 26000 A - 26000 A 26000 A
元件数量 2 - 2 2
相数 1 - 1 1
端子数量 2 - 2 2
最高工作温度 150 °C - 150 °C 150 °C
最大输出电流 100 A - 100 A 100 A
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT
认证状态 Not Qualified - Not Qualified Not Qualified
最大重复峰值反向电压 35 V - 40 V 45 V
最大反向电流 400000 µA - 400000 µA 400000 µA
表面贴装 NO - NO NO
技术 SCHOTTKY - SCHOTTKY SCHOTTKY
端子形式 UNSPECIFIED - UNSPECIFIED UNSPECIFIED
端子位置 UPPER - UPPER UPPER
Base Number Matches 1 - 1 1
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