2223-1.7
1.7 Watts - 24 Volts, Class C
Microwave 2200 - 2300
MHz
GENERAL DESCRIPTION
The 2223-1.7 is a COMMON BASE transistor capable of providing 1.7 Watts
of Class C, RF output power over the band 2200 - 2300 MHz. This transistor
is designed for Microwave Broadband Class C amplifier applications. It
includes input prematching and utilizes Gold metalization and diffused
ballasting to provide high reliability and supreme ruggedness. The transistor
uses a fully hermetic High Temperature Solder sealed package.
CASE OUTLINE
55LV, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces Collector to Emiter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
7 Watts
45 Volts
3.5 Volts
.25 Amps
- 65 to + 200
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
η
c
VSWR
CHARACTERISTICS
Power Output
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
TEST
CONDITIONS
F =2.2 - 2.3 GHz
Vcc = 24 Volts
MIN
1.7
.25
8.3
35
10:1
TYP
MAX
UNITS
Watts
Watts
dB
%
BVces
BVebo
Hfe
Cob
θ
jc
Collector to Base Breakdown
Emitter to Base Breakdown
Current Gain
Output Capacitance
Thermal Resistance
Ic = 10 mA
Ie = 2 mA
Vce = 5 V, Ic = 160mA
Vcb = 28V, 1MHz
Tc = 25
o
C
40
3.5
10
Volts
Volts
100
24
o
pF
C/W
Issue A June 1997
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
2223-1.7
August 1996
