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23A003

RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, S Band, Silicon, NPN, HERMETIC SEALED, CASE 55BT, 2 PIN

器件类别:分立半导体    晶体管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

器件标准:

下载文档
器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
符合
Objectid
1464808570
包装说明
FLANGE MOUNT, R-CDFM-F2
针数
2
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
HIGH RELIABILITY
外壳连接
EMITTER
最大集电极电流 (IC)
0.3 A
集电极-发射极最大电压
20 V
配置
SINGLE
最小直流电流增益 (hFE)
20
最高频带
S BAND
JESD-30 代码
R-CDFM-F2
JESD-609代码
e0
元件数量
1
端子数量
2
最高工作温度
200 °C
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
极性/信道类型
NPN
最大功率耗散 (Abs)
3 W
认证状态
Not Qualified
表面贴装
YES
端子面层
TIN LEAD
端子形式
FLAT
端子位置
DUAL
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
4500 MHz
文档预览
23A003
0.3 Watts, 15 Volts, Class A
Linear to 2300MHz
GENERAL DESCRIPTION
The
23A003
is a common emitter transistor
capable of providing 0.3Watts of Class A,
RF output power to 2300 MHz. This transistor is specifically designed for general Class A
amplifier applications. It utilizes gold metalization and diffused ballasting to provide high
reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature
Solder Sealed package.
CASE OUTLINE
55BT, Style 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25°C
BV
CES
Collector to Emitter Voltage
BV
EBO
Emitter to Base Voltage
I
C
Collector Current
Storage Temperature
Operating Junction Temperature
3.0 Watts
50 Volts
3.5 Volts
0.3 Amps
-65 to +200
°C
+200
°C
FUNCTIONAL CHARACTERISTICS @ 25°C
°
SYMBOL
P
OUT
P
IN
G
P
F
T
VSWR
CHARACTERISTICS
Power Out
Power Input
Power Gain
Transition Frequency
Load Mismatch Tolerance
TEST CONDITIONS
F = 2300 MHz
V
CE
= 15V
I
C
= 100mA
MIN
0.3
-
10.0
4.2
-
TYP
-
-
11.0
4.5
-
MAX
-
0.03
-
10:1
UNITS
W
W
dB
GHz
-
ELECTRICAL CHARACTERISTICS @ 25°C
°
SYMBOL
BV
EBO
BV
CES
BV
CEO
h
FE
C
OB
θjc
1
CHARACTERISTICS
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Output Capacitance
Junction-Case Thermal Resistance
TEST CONDITIONS
I
E
= 2 mA
I
C
= 20 mA
I
C
= 20 mA
I
C
= 100 mA, V
CE
= 5 V
F = 1MHz, V
CB
= 20V
MIN
3.5
50
20
20
-
-
TYP
-
-
-
-
2.5
-
MAX
-
-
-
-
-
45
UNITS
V
V
V
-
pF
°C/W
NOTES: 1. At rated output power with MSC fixture.
Rev. A: May. 2010
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at
www.microsemi.com
or contact our factory direct.
23A003
S-Parameters @ Vcc=15V, Ic=100mA
!Device Type:
23A003
!Bias Point: Vcc= 15.0V, Ic=100mA
# GHZ S MA R 50
!Freq
S11
S11
S21
!(GHz)
Mag
Ang
Mag
0.1
0.6107
-76.06
13.6678
0.2
0.7326
-135.42
12.5791
0.3
0.7630
-155.34
9.7140
0.4
0.7503
-166.69
7.2302
0.5
0.7278
-172.33
5.7590
0.6
0.7251
-175.92
4.8585
0.7
0.7552
-179.59
4.3286
0.8
0.7651
-174.23
3.8770
0.9
0.7461
169.29
3.3998
1.0
0.7245
167.19
2.9883
1.1
0.7255
166.25
2.7007
1.2
0.7475
164.87
2.5264
1.3
0.7698
161.53
2.4094
1.4
0.7674
157.17
2.2298
1.5
0.7435
154.28
1.9959
1.6
0.7271
153.25
1.8027
1.7
0.7684
149.16
1.6654
1.8
0.7043
143.11
1.6027
1.9
0.7580
146.07
1.5619
2.0
0.7486
139.88
1.5237
2.1
0.7190
134.94
1.4152
2.2
0.6849
131.72
1.3130
2.3
0.6692
130.44
1.2329
S21
Ang
131.48
110.59
94.89
85.46
77.66
72.06
65.91
57.89
50.62
45.27
41.63
37.95
32.57
25.61
19.99
15.93
12.64
8.93
7.55
-0.96
-6.93
-11.11
-12.89
S12
Mag
0.0193
0.0239
0.0263
0.0266
0.0275
0.0280
0.0290
0.0296
0.0316
0.0337
0.0358
0.0384
0.0405
0.0417
0.0443
0.0458
0.0471
0.0616
0.0515
0.0529
0.0547
0.0536
0.0521
S12
Ang
39.46
32.18
26.91
25.60
24.47
24.50
25.99
27.61
30.58
30.56
31.58
30.98
29.99
29.59
29.91
27.97
28.90
32.80
20.28
19.34
19.68
15.86
20.45
S22
Mag
0.8131
0.5643
0.4927
0.4952
0.4870
0.4822
0.4867
0.4975
0.5119
0.5398
0.5652
0.5773
0.5843
0.5897
0.6099
0.6377
0.6168
0.5593
0.4580
0.5808
0.6648
0.6980
0.7398
S22
Ang
-36.12
-46.91
-51.60
-54.09
-60.62
-66.74
-72.71
-77.78
-82.81
-88.26
-94.79
-101.37
-107.25
-112.10
-115.97
-122.20
-129.19
-134.58
-124.43
-117.67
-123.45
-128.45
-132.08
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at
www.microsemi.com
or contact our factory direct.
23A003
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at
www.microsemi.com
or contact our factory direct.
23A003
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at
www.microsemi.com
or contact our factory direct.
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