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25AA080-I/PB62

1K X 8 SPI BUS SERIAL EEPROM, PDIP8, 0.300 INCH, PLASTIC, MS-001, DIP-8

器件类别：存储    存储   

厂商名称：Microchip(微芯科技)

厂商官网：https://www.microchip.com

器件标准：

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
零件包装代码
DIP
包装说明
0.300 INCH, PLASTIC, MS-001, DIP-8
针数
8
Reach Compliance Code
compli
ECCN代码
EAR99
最大时钟频率 (fCLK)
1 MHz
JESD-30 代码
R-PDIP-T8
JESD-609代码
e3
长度
9.46 mm
内存密度
8192 bi
内存集成电路类型
EEPROM
内存宽度
8
功能数量
1
端子数量
8
字数
1024 words
字数代码
1000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
1KX8
封装主体材料
PLASTIC/EPOXY
封装代码
DIP
封装形状
RECTANGULAR
封装形式
IN-LINE
并行/串行
SERIAL
峰值回流温度（摄氏度）
NOT SPECIFIED
认证状态
Not Qualified
座面最大高度
4.32 mm
串行总线类型
SPI
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
1.8 V
标称供电电压 (Vsup)
2.5 V
表面贴装
NO
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Matte Tin (Sn)
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
7.62 mm
最长写入周期时间 (tWC)
5 ms
Base Number Matches
1
文档预览
Not recommended for new designs –
Please use 25AA080A/B or 25LC080A/B.
25AA080/25LC080/25C080
8K SPI Bus Serial EEPROM
Device Selection Table
Part
Number
25AA080
25LC080
25C080
V
CC
Range
1.8-5.5V
2.5-5.5V
4.5-5.5V
Max. Clock
Frequency
1 MHz
2 MHz
3 MHz
Temp.
Ranges
I
I
I,E
Description:
The Microchip Technology Inc. 25AA080/25LC080/
25C080 (25XX080
*
) are 8 Kbit Serial Electrically
Erasable PROMs. The memory is accessed via a
simple Serial Peripheral Interface (SPI) compatible
serial bus. The bus signals required are a clock input
(SCK) plus separate data in (SI) and data out (SO)
lines. Access to the device is controlled through a Chip
Select (CS) input.
Communication to the device can be paused via the
hold pin (HOLD). While the device is paused, transi-
tions on its inputs will be ignored, with the exception of
chip select, allowing the host to service higher priority
interrupts.
Features:
• Low-power CMOS technology:
- Write current: 3 mA maximum
- Read current: 500
A
typical
- Standby current: 500 nA typical
• 1024 x 8-bit organization
• 16 byte page
• Write cycle time: 5 ms max.
• Self-timed erase and write cycles
• Block write protection:
- Protect none, 1/4, 1/2 or all of array
• Built-in write protection:
- Power-on/off data protection circuitry
- Write enable latch
- Write-protect pin
• Sequential read
• High reliability:
- Endurance: 1 M cycles
- Data retention: > 200 years
- ESD protection: > 4000V
• 8-pin PDIP and SOIC (150 mil)
• Temperature ranges supported:
- Industrial (I):
-40C to +85C
- Automotive (E) (25C080):
-40°C to +125°C
Package Types
PDIP/SOIC
CS
SO
WP
V
SS
1
25AA080/
2
3
4
8
7
6
5
V
CC
HOLD
SCK
SI
Block Diagram
Status
Register
HV Generator
I/O Control
Logic
Memory
Control
Logic
X
Dec
EEPROM
Array
Page Latches
SI
SO
CS
SCK
HOLD
WP
V
CC
V
SS
Y Decoder
Sense Amp.
R/W Control
1997-2012 Microchip Technology Inc.
DS21230E-page 1
25AA080/25LC080/25C080
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
V
CC
.............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. V
SS
........................................................................................................ -0.6V to V
CC
+ 1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-40°C to 125°C
Soldering temperature of leads (10 seconds) .......................................................................................................+300°C
ESD protection on all pins ......................................................................................................................................... 4 KV
†
NOTICE: Stresses above those listed under ‘Maximum ratings’ may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at those or any other conditions above those indicated in
the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended
period of time may affect device reliability.
1.1
DC Characteristics
Industrial (I): T
A
= -40°C to +85°C
Automotive (E): T
A
= -40°C to +125°C
Min.
2.0
0.7 V
CC
-0.3
-0.3
—
—
V
CC
-0.5
-10
-10
—
Max.
V
CC
+1
V
CC
+1
0.8
0.3 V
CC
0.4
0.2
—
10
10
7
Units
V
V
V
V
V
V
V
A
A
pF
V
CC
= 1.8V to 5.5V
V
CC
= 4.5V to 5.5V (25C080 only)
Test Conditions
V
CC
2.7V
(Note)
V
CC
< 2.7V
(Note)
V
CC
2.7V
(Note)
V
CC
< 2.7V
(Note)
I
OL
= 2.1 mA
I
OL
= 1.0 mA, V
CC
< 2.5V
I
OH
= -400
A
CS = V
CC
, V
IN
= V
SS TO
V
CC
CS = V
CC
, V
OUT
= V
SS TO
V
CC
T
A
= 25°C, CLK = 1.0 MHz,
V
CC
= 5.0V
(Note)
V
CC
= 5.5V; F
CLK
= 3.0 MHz;
SO = Open
V
CC
= 2.5V; F
CLK
= 2.0 MHz;
SO = Open
V
CC
= 5.5V
V
CC
= 2.5V
CS = V
CC
= 5.5V, Inputs tied to V
CC
or
V
SS
CS = V
CC
= 2.5V, Inputs tied to V
CC
or
V
SS
DC CHARACTERISTICS
Param.
No.
D001
D002
D003
D004
D005
D006
D007
D008
D009
D010
Sym.
V
IH
1
V
IH
2
V
IL
1
V
IL
2
V
OL
V
OL
V
OH
I
LI
I
LO
C
INT
Characteristic
High-level input
voltage
Low-level input
voltage
Low-level output
voltage
High-level output
voltage
Input leakage current
Output leakage
current
Internal Capacitance
(all inputs and
outputs)
D011
I
CC
Read
Operating Current
—
—
1
500
mA
A
D012
D013
I
CC
Write
I
CCS
Standby Current
—
—
—
—
5
3
5
1
mA
mA
A
A
Note:
This parameter is periodically sampled and not 100% tested.
DS21230E-page 2
1997-2012 Microchip Technology Inc.
25AA080/25LC080/25C080
1.2
AC Characteristics
Industrial (I):
T
A
= -40°C to +85°C
Automotive (E): T
A
= -40°C to +125°C
Characteristic
Clock Frequency
Min.
—
—
—
100
250
500
150
250
475
500
30
50
50
50
100
100
—
—
150
230
475
150
230
475
50
50
—
—
—
0
—
—
—
100
100
200
100
100
200
100
150
200
100
150
200
—
1M
Max.
3
2
1
—
—
—
—
—
—
—
—
—
—
—
—
—
2
2
—
—
—
—
—
—
—
—
150
230
475
—
200
250
500
—
—
—
—
—
—
—
—
—
—
—
—
5
—
Units
MHz
MHz
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
E/W
Cycles
V
CC
= 1.8V to 5.5V
V
CC
= 4.5V to 5.5V (25C080 only)
Test Conditions
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
—
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
(Note 1)
(Note 1)
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
—
—
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
(Note 1)
V
CC
= 4.5V to 5.5V
(Note 1)
V
CC
= 2.5V to 4.5V
(Note 1)
V
CC
= 1.8V to 2.5V
(Note 1)
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
V
CC
= 4.5V to 5.5V
(Note 1)
V
CC
= 2.5V to 4.5V
(Note 1)
V
CC
= 1.8V to 2.5V
(Note 1)
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
—
(Note 2)
AC CHARACTERISTICS
Param.
No.
1
Sym.
F
CLK
2
T
CSS
CS Setup Time
3
T
CSH
CS Hold Time
4
5
T
CSD
Tsu
CS Disable Time
Data Setup Time
6
T
HD
Data Hold Time
7
8
9
T
R
T
F
T
HI
CLK Rise Time
CLK Fall Time
Clock High Time
10
T
LO
Clock Low Time
11
12
13
T
CLD
T
CLE
T
V
Clock Delay Time
Clock Enable Time
Output Valid from Clock Low
14
15
T
HO
T
DIS
Output Hold Time
Output Disable Time
16
T
HS
HOLD Setup Time
17
T
HH
HOLD Hold Time
18
T
HZ
HOLD Low to Output High-Z
19
T
HV
HOLD High to Output Valid
20
21
T
WC
—
Internal Write Cycle Time
Endurance
Note 1:
2:
This parameter is periodically sampled and not 100% tested.
This parameter is not tested but ensured by characterization. For endurance estimates in a specific application, please
consult the Total Endurance™ Model which can be obtained from Microchip’s web site at: www.microchip.com.
1997-2012 Microchip Technology Inc.
DS21230E-page 3
25AA080/25LC080/25C080
FIGURE 1-1:
CS
16
SCK
18
SO
n+2
n+1
n
High-impedance
19
n
5
n
n-1
n-1
17
16
17
HOLD TIMING
don’t care
SI
HOLD
n+2
n+1
n
FIGURE 1-2:
SERIAL INPUT TIMING
4
CS
2
Mode 1,1
SCK Mode 0,0
5
SI
6
LSB in
7
8
3
12
11
MSB in
SO
High-impedance
FIGURE 1-3:
SERIAL OUTPUT TIMING
CS
9
SCK
13
14
SO
MSB out
15
ISB out
10
3
Mode 1,1
Mode 0,0
SI
don’t care
DS21230E-page 4
1997-2012 Microchip Technology Inc.
25AA080/25LC080/25C080
1.3
AC Test Conditions
V
LO
= 0.2V
V
HI
= V
CC
- 0.2V
V
HI
= 4.0V
Input
Output
Note 1:
For V
CC
4.0V
2:
For V
CC
>
4.0V
—
(Note 1)
(Note 2)
SO
0.5 V
CC
0.5 V
CC
1.8 K
100 pF
2.25 K
FIGURE 1-4:
AC TEST CIRCUIT
V
CC
AC Waveform:
Timing Measurement Reference Level
1997-2012 Microchip Technology Inc.
DS21230E-page 5
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参数对比
与25AA080-I/PB62相近的元器件有：25C080-E/PC75、25C080-I/PC62、25LC080-I/PA62、25LC080C-H/SNVAO、25LC080CT-H/SNVAO、25LC080/SN。描述及对比如下：
型号 25AA080-I/PB62 25C080-E/PC75 25C080-I/PC62 25LC080-I/PA62 25LC080C-H/SNVAO 25LC080CT-H/SNVAO 25LC080/SN
描述 1K X 8 SPI BUS SERIAL EEPROM, PDIP8, 0.300 INCH, PLASTIC, MS-001, DIP-8 1K X 8 SPI BUS SERIAL EEPROM, PDIP8, 0.300 INCH, PLASTIC, MS-001, DIP-8 1K X 8 SPI BUS SERIAL EEPROM, PDIP8, 0.300 INCH, PLASTIC, MS-001, DIP-8 1K X 8 SPI BUS SERIAL EEPROM, PDIP8, 0.300 INCH, PLASTIC, MS-001, DIP-8 EEPROM, 1KX8, Serial, CMOS, PDSO8 EEPROM, 1KX8, Serial, CMOS, PDSO8 存储器接口类型：SPI 存储器容量：8Kb (1K x 8) 工作电压：2.5V ~ 5.5V 存储器类型：Non-Volatile 8 Kbit(1K x 8bit)，SPI接口，电压范围：2.5V~5.5V
包装说明 0.300 INCH, PLASTIC, MS-001, DIP-8 0.300 INCH, PLASTIC, MS-001, DIP-8 DIP, 0.300 INCH, PLASTIC, MS-001, DIP-8 SOP, SOP, SOP, SOP8,.25
Reach Compliance Code compli compli compli compli compli compli compliant
最大时钟频率 (fCLK) 1 MHz 3 MHz 3 MHz 2 MHz 3 MHz 3 MHz 2 MHz
JESD-30 代码 R-PDIP-T8 R-PDIP-T8 R-PDIP-T8 R-PDIP-T8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
内存密度 8192 bi 8192 bi 8192 bi 8192 bi 8192 bi 8192 bi 8192 bit
内存集成电路类型 EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM
内存宽度 8 8 8 8 8 8 8
功能数量 1 1 1 1 1 1 1
端子数量 8 8 8 8 8 8 8
字数 1024 words 1024 words 1024 words 1024 words 1024 words 1024 words 1024 words
字数代码 1000 1000 1000 1000 1000 1000 1000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 125 °C 85 °C 85 °C 150 °C 150 °C 70 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -
组织 1KX8 1KX8 1KX8 1KX8 1KX8 1KX8 1KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 DIP DIP DIP DIP SOP SOP SOP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
并行/串行 SERIAL SERIAL SERIAL SERIAL SERIAL SERIAL SERIAL
串行总线类型 SPI SPI SPI SPI SPI SPI SPI
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 1.8 V 4.5 V 4.5 V 2.5 V 2.5 V 2.5 V 2.5 V
标称供电电压 (Vsup) 2.5 V 5 V 5 V 3.3 V 2.7 V 2.7 V 3.3 V
表面贴装 NO NO NO NO YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL AUTOMOTIVE INDUSTRIAL INDUSTRIAL AUTOMOTIVE AUTOMOTIVE COMMERCIAL
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING GULL WING
端子节距 2.54 mm 2.54 mm 2.54 mm 2.54 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL
最长写入周期时间 (tWC) 5 ms 5 ms 5 ms 5 ms 6 ms 6 ms 5 ms
Base Number Matches 1 1 1 1 1 1 1
是否无铅 不含铅 不含铅 不含铅 不含铅 - - 不含铅
是否Rohs认证 符合 符合 符合 符合 - - 符合
零件包装代码 DIP DIP DIP DIP - - SOIC
针数 8 8 8 8 - - 8
ECCN代码 EAR99 EAR99 EAR99 EAR99 - - EAR99
JESD-609代码 e3 e3 e3 e3 - - e3
长度 9.46 mm 9.46 mm 9.46 mm 9.46 mm 4.9 mm 4.9 mm -
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - 260
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified - - Not Qualified
座面最大高度 4.32 mm 4.32 mm 4.32 mm 4.32 mm 1.75 mm 1.75 mm -
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) - - Matte Tin (Sn)
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - 40
宽度 7.62 mm 7.62 mm 7.62 mm 7.62 mm 3.9 mm 3.9 mm -
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器件捷径:
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