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2729-120

RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, HERMETIC SEALED, 55 KS, 2 PIN

器件类别:分立半导体    晶体管   

厂商名称:ADPOW

厂商官网:http://www.advancedpower.com/

下载文档
器件参数
参数名称
属性值
包装说明
FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code
unknown
其他特性
HIGH RELIABILITY
外壳连接
BASE
最大集电极电流 (IC)
15 A
配置
SINGLE
最高频带
S BAND
JESD-30 代码
R-CDFM-F2
元件数量
1
端子数量
2
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子形式
FLAT
端子位置
DUAL
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
2729 – 120
120 Watts - 36 Volts, 100µs, 10%
Radar 2700-2900 MHz
PRELIMINARY
GENERAL DESCRIPTION
The 2729-120 is an internally matched, COMMON BASE transistor
capable of providing 120 Watts of pulsed RF output power at one
hundred microseconds pulse width, ten percent duty factor across the
band 2700 to 2900 MHz. This hermetically solder-sealed transistor is
specifically designed for S-Band radar applications. It utilizes gold
metalization and emitter ballasting to provide high reliability and
supreme ruggedness.
CASE OUTLINE
55KS, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C
o
389 Watts Pk
65 Volts
3.0 Volts
15 Amps
See Attached Drawing
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current , Peak
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
η
c
VSWR
1
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
TEST CONDITIONS
F = 2700-2900 MHz
Vcc = 36 Volts
Pulse Width = 100
µs
Duty = 10 %
MIN
120
8.24
40
8.8
50
TYP
MAX
18
2:1
UNITS
Watts
Watts
dB
%
F = 2900MHz, Po =120W
BVces
BVebo
Hfe
θ
jc
1
Collector to Emitter Breakdown
Emitter to Base Breakdown
DC Current Gain
Thermal Resistance
Ic = 50 mA
Ie = 25 mA
Vce = 5 V, Ic = 500 mA
Rated Pulse Condition
65
3.0
20
45
Volts
Volts
0.45
o
C/W
Note 1: Pulse condition of 100µsec, 10%.
Issue October 2001
Pin=42dBm=16Watts
Freq (Ghz) out (dBm) Pout (W)
P
2.7
51.4
138.0
2.75
51.6
144.5
2.8
51.8
151.4
2.85
51.6
144.5
2.9
51.1
128.8
Icc
0.61
0.68
0.7
0.67
0.6
Eff (%)
63
59
60
60
60
Pout and Eff. vs. Frequency
Vcc=36V, Pin=16W, 100us, 10%
200.0
180.0
160.0
140.0
120.0
100.0
80.0
60.0
40.0
20.0
2.65
2.7
2.75
2.8
2.85
G2351-3-1
T.F.#13
Efficiency
Pout
100
90
80
70
60
50
40
30
20
10
2.9
2.95
G2351-3-1 s/n#3-2 T.F. #13
2.7Ghz
Pin (W) Pout (dBm) Pout (W)
7.0
43
20.0
8.0
45.2
33.1
9.0
46.8
47.9
10.0
48.2
66.1
11.0
49.2
83.2
12.0
50.1
102.3
13.0
50.6
114.8
14.0
51
125.9
15.0
51.4
138.0
16.0
51.7
147.9
2.8Ghz
2.9Ghz
Pout (dBm) out (W) Pout (dBm) (W)
P
Pout
45.2
33.1
44.2
26.3
46.8
47.9
45.7
37.2
48.2
66.1
46.7
46.8
49
79.4
47.8
60.3
50
100.0 48.6
72.4
50.6
114.8 49.3
85.1
51
125.9 49.8
95.5
51.4
138.0 50.3
107.2
51.6
144.5 50.7
117.5
51.8
151.4
51
125.9
Power Output vs. Power Input
Vcc=36V, PW=100us, 10%
160.0
140.0
120.0
100.0
80.0
60.0
40.0
20.0
0.0
7.0
9.0
11.0
13.0
15.0
17.0
Pin (Watts)
G2351-3-2
T.F.#13
2.8Ghz
2.7Ghz
2.9Ghz
K
I
A
COLLECTOR
H
L
2729-120
BASE
B
EMITTER
D
M
J
G
F
C
E
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
MILLIMETER
22.86
10.16
4.19
9.39
1.52
3.05
0.13
16.51
45
12.70
3.30 DIA
9.78
16.51
TOL
.25
.25
.19
.13
.13
.13
.03
.76
5
.25
.13
.13
MAX
INCHES
.900
.400
.165
.370
.060
.120
.005
.650
45
.500
.130 DIA
.385
.650
TOL
.010
.010
.007
.005
.005
.005
.001
.030
5
.030
.005
.005
MAX
Electrolytic Capacitor\P50V 330uF & 33uF
C4
330uf
-
C5
33uf
+
Carbon Resistor\P5.6 Ohms .25W
2729-110 \P
Rev3\P
R1
C3
C2
2729-110 \P
Rev3\P
Bill of Materials
Part Number
2729-110 Rev3
2729-110 Rev3
Description
Input Ckt
Output Ckt
Heat Sink
Qty
1
1
1
1
1
HS1520-K15-25\P
65-xxxx-20\P
65-xxxx-01
C2=Chip Cap 20pF\P
C3=Chip Cap 0.1uF
65-xxx-11.2
Carbon Resistor\P11.2 Ohms .25W
2
65-xxx-330
65-xxx-33
Connector
Cap Electro 50V 330uF
Cap Electro 50V 33uF
SMA Fem Connector
1
1
2
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