2729-170R4
2729-170
170 Watts, 38 Volts, 100µs, 10%
Radar 2700-2900 MHz
GENERAL DESCRIPTION
The 2729-170 is an internally matched, COMMON BASE bipolar transistor
capable of providing 170 Watts of pulsed RF output power at 100µs pulse
width, 10% duty factor across the 2700 to 2900 MHz band.
The transistor
prematch and test fixture has been optimized through the use of Pulsed
Automated Load Pull.
This hermetically solder-sealed transistor is specifically
designed for S-band radar applications. It utilizes gold metallization and emitter
ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55KS-1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
570 W
Device Dissipation @ 25°C
1
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
)
65
Emitter to Base Voltage (BV
ebo
)
3.0
Collector Current (I
c
)
17 A
Maximum Temperatures
Storage Temperature
-65 to +200
Operating Junction Temperature
+200
V
V
°C
°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
P
out
P
in
P
g
η
c
VSWR
CHARACTERISTICS
Power Output
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
1
TEST CONDITIONS
F=2700-2900 MHz
V
cc
= 38 Volts
Pulse Width = 100 µs
Duty Factor = 10%
F = 2900 MHz, P
o
= 170 W
MIN
170
25.7
8.2
52
8.6
60
2:1
TYP
MAX
UNITS
W
W
dB
%
FUNCTIONAL CHARACTERISTICS @ 25°C
BV
ebo
Iebo
BV
ces
Ices
h
FE
θjc
1
NOTE:
Emitter to Base Breakdown
Emitter to Base Leakage
Collector to Emitter Breakdown
Collector to Emitter Leakage
DC – Current Gain
Thermal Resistance
1. At rated output power and pulse conditions
Ie = 30 mA
Veb = 1.5 V
Ic = 120 mA
Vce = 36 V
Vce = 5V, Ic = 600 mA
3.0
2
56
18
65
7
50
0.30
V
mA
V
mA
°C/W
Issue April 2005
MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE
CHECK OUR WEB SITE AT
WWW.MICROSEMI.COM
OR CONTACT OUR FACTORY DIRECTLY.
2729-170R4
2729-170
Vcc = 38 Volts, Pulse Width = 100µs, Duty = 10 %
G2754-2,
Product is in characterization, additional curves will be inserted at the conclusion.
Pout vs. Pin
Efficiency vs Power Out
70.0
60.0
50.0
6
Efficiency (%)
Power Gain vs Power Out
9
8
7
200.0
180.0
160.0
140.0
Pout (W)
120.0
100.0
80.0
60.0
40.0
2.7GHz
2.8GHz
2.9GHz
40.0
30.0
20.0
10.0
2.7GHz
2.8GHz
2.9GHz
Gain (dB)
5
4
3
2
1
0
2.7GHz
2.8GHz
2.9GHz
20.0
0.0
0.0
10.0
Pin (W)
20.0
30.0
0.0
0.0
50.0
100.0
150.0
200.0
Power Output (W)
0.0
50.0
100.0
Pout (W)
150.0
200.0
Input and Load Impedance
Input Impedance vs Frequency
15
Load Impedance vs Frequency
4
Zload = Rl + jXl
2
0
-2
-4
-6
Frequency - GHz
2.7
2.75
2.8
2.85
2.9
Rl
jXl
Zin = Rin + jXin
10
5
0
2.7
-5
Frequency - GHz
2.75
2.8
2.85
2.9
Rin
jXin
Note:
Z
in
is looking into the transistor input,
Z
Load
is looking into the Output Circuit.
MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE
CHECK OUR WEB SITE AT
WWW.MICROSEMI.COM
OR CONTACT OUR FACTORY DIRECTLY.
2729-170R4
2729-170
Broadband Test Circuit –
Destination
F1
F2
F3
F4
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
W (Mil)
51
51
51
51
51
250
51
314
96
827
965
51
166
51
L (Mil)
115
395
630
50
424
107
284
410
91
177
295
110
125
100
Destination
D11
D12
D13
W (Mil)
274
51
51
Duroid 6002, 20Mil, 1Oz Cu
List of component
Destination
Value
C1
10pF
C2
1000pF
C3
10000pF
C4
10000pF
C5
10000pF
C6
2200uF
C7
47uF
R
2.5 ohms (may needed)
L (Mil)
160
336
324
Size
A
B
B
B
B
Electrolytic
Electrolytic
Fix
2729-170
MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE
CHECK OUR WEB SITE AT
WWW.MICROSEMI.COM
OR CONTACT OUR FACTORY DIRECTLY.
2729-170R4
MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE
CHECK OUR WEB SITE AT
WWW.MICROSEMI.COM
OR CONTACT OUR FACTORY DIRECTLY.
