2729-170R2
2729-170
170 Watts, 38 Volts, 100µs, 10%
Radar 2700-2900 MHz
GENERAL DESCRIPTION
The 2729-170 is an internally matched, COMMON BASE bipolar transistor
capable of providing 170 Watts of pulsed RF output power at 100µs pulse
width, 10% duty factor across the 2700 to 2900 MHz band.
The transistor
prematch and test fixture has been optimized through the use of Pulsed
Automated Load Pull.
This hermetically solder-sealed transistor is specifically
designed for S-band radar applications. It utilizes gold metallization and emitter
ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55KS-1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C
1
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
)
Emitter to Base Voltage (BV
ebo
)
Collector Current (I
c
)
Maximum Temperatures
570 W
65 V
3.0 V
17 A
Storage Temperature
-65 to +200
°C
Operating Junction Temperature
+200
°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
P
out
P
in
P
g
η
c
VSWR
CHARACTERISTICS
Power Output
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
1
TEST CONDITIONS
F=2700-2900 MHz
V
cc
= 38 Volts
Pulse Width = 100 µs
Duty Factor = 10%
F = 2900 MHz, P
o
= 170 W
MIN
170
25.7
8.2
52
8.6
60
2:1
TYP
MAX
UNITS
W
W
dB
%
FUNCTIONAL CHARACTERISTICS @ 25°C
BV
ebo
Iebo
BV
ces
Ices
h
FE
θjc
1
NOTE:
Emitter to Base Breakdown
Emitter to Base Leakage
Collector to Emitter Breakdown
Collector to Emitter Leakage
DC – Current Gain
Thermal Resistance
1. At rated output power and pulse conditions
Ie = 30 mA
Veb = 1.5 V
Ic = 120 mA
Vce = 36 V
Vce = 5V, Ic = 600 mA
3.0
2
56
18
65
7
50
0.30
V
mA
V
mA
°C/W
Issue April 2005
APT-RF RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK
OUR WEB SITE AT
WWW.ADVANCEDPOWER.COM
OR CONTACT OUR FACTORY DIRECTLY.
2729-170R2
2729-170
Vcc = 38 Volts, Pulse Width = 100µs, Duty = 10 %
G2754-2,
Product is in characterization, additional curves will be inserted at the conclusion.
Pout vs. Pin
Efficiency vs Power Out
70.0
9
8
Power Gain vs Power Out
200.0
180.0
160.0
140.0
Efficiency (%)
60.0
7
50.0
6
Gain (dB)
Pout (W)
120.0
100.0
80.0
60.0
2.7GHz
2.8GHz
2.9GHz
40.0
2.7GHz
2.8GHz
5
4
3
2.7GHz
2.8GHz
2.9GHz
30.0
2.9GHz
20.0
2
1
0
0.0
40.0
20.0
0.0
0.0
10.0
Pin (W)
20.0
30.0
10.0
0.0
0.0
50.0
100.0
150.0
200.0
Power Output (W)
50.0
100.0
Pout (W)
150.0
200.0
Input and Load Impedance
Input Impedance vs Frequency
15
Zin = Rin + jXin
10
5
0
-5
2.7
2.75
2.8
2.85
2.9
Rin
jXin
Zload = Rl + jXl
Load Impedance vs Frequency
4
2
0
-2
-4
-6
Frequency - GHz
2.7
2.75
2.8
2.85
2.9
Rl
jXl
Frequency - GHz
Note: Zin is looking into the transistor input, Zl is looking into the Output Circuit.
APT-RF RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK
OUR WEB SITE AT
WWW.ADVANCEDPOWER.COM
OR CONTACT OUR FACTORY DIRECTLY.
2729-170R2
2729-170
Broadband Test Circuit –
APT-RF RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK
OUR WEB SITE AT
WWW.ADVANCEDPOWER.COM
OR CONTACT OUR FACTORY DIRECTLY.
2729-170R2
2729-170
APT-RF RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK
OUR WEB SITE AT
WWW.ADVANCEDPOWER.COM
OR CONTACT OUR FACTORY DIRECTLY.
RF/无线
