2731-100MR3
2731-100M
100 Watts, 36 Volts, 200µs, 10%
Radar 2700-3100 MHz
GENERAL DESCRIPTION
The 2731-100M is an internally matched, COMMON BASE bipolar transistor
capable of providing 100 Watts of pulsed RF output power at 200µs pulse
width, 10% duty factor across the 2700 to 3100 MHz band. The transistor
prematch and test fixture has been optimized through the use of 10 Ohm TRL
Analysis. This ceramic sealed transistor is specifically designed for S-band
radar applications. It utilizes gold metallization and emitter ballasting to
provide high reliability and supreme ruggedness.
CASE OUTLINE
55KS-1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
575
Device Dissipation @ 25°C
1
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
)
65
Emitter to Base Voltage (BV
ebo
)
3.0
Collector Current (I
c
)
15.0
Maximum Temperatures
Storage Temperature
-65 to +200
Operating Junction Temperature
+200
W
V
V
A
°C
°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
P
out
P
g
η
c
R
l
P
d
VSWR-T
CHARACTERISTICS
Power Output
Power Gain
Collector Efficiency
Return Loss
Pulse Droop
Load Mismatch Tolerance
TEST CONDITIONS
F=2700-3100 MHz
Pulse Width = 200 µs
Duty Factor = 10 %
Power Input = 16W
Vcc = +36V
F = 2700, 2900, 3100 MHz
MIN
100
8.0
40
-7
TYP
115
8.5
MAX
140
9.4
UNITS
W
dB
%
dB
dB
0.6
2:1
FUNCTIONAL CHARACTERISTICS @ 25°C
BV
ebo
BV
ces
h
FE
θjc
1
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Thermal Resistance
Ie = 30 mA
Ic = 120 mA
Vce = 5V, Ic = 600 mA
3.0
65
15
0.43
°C/W
V
V
Issue March 2006
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at
www.microsemi.com
or contact our factory direct.
2731-100MR3
2731-100M
Vcc = 36 Volts, Pulse Width = 200µs, Duty = 10 %
Pin vs. Pout
140.0
120.0
Pout (Watts)
100.0
80.0
60.0
40.0
20.0
0.0
0.0
5.0
10.0
15.0
20.0
25.0
Pin (Watts)
3.1GHz
3.0GHz
2.8GHz
2.7GHz
2.9GHz
Efficiency vs. Frequency
55
50
Efficiency (%)
45
40
35
30
2.65
2.7
2.75
2.8
2.85
2.9
2.95
3
3.05
3.1
3.15
Frequency (GHz)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at
www.microsemi.com
or contact our factory direct.
2731-100MR3
Gain vs. Frequency
9
8
7
6
5
4
3
2
1
0
2.6
2.7
2.8
2.9
Frequency (GHz)
3
3.1
3.2
Impedance curves will be added at the completion of the characterization.
Gain (dB)
Impedance
Data
Freq (GHz)
Zs
2.7
8.87-j12.64
2.8
8.24-j10.26
2.9
8.54-j8.06
3.0
9.85-j6.05
3.1
10.26-j4.88
Zl
4.33-j4.67
3.95-j4.94
3.47-j5.08
2.96-j5.06
2.48-j4.92
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at
www.microsemi.com
or contact our factory direct.
2731-100MR3
Circuit Component
Item
C1
C2
C3
C4
R1
R2
L1
L2
Material
Description
Chip Cap A size
Chip Cap B size
Chip Cap B size
Electrolytic Cap
Chip resistor
Fix resistor
Silver ribbon
Copper wire
Roger-Duroid
Value
9.1pF
10,000pF
100pF
2200uF
20 ohms
1.5 ohms
L=870 Mil, W=70 Mil.
21 AWG, 560 Mil
6006 @ 25Mil, Er=6.15, 1Oz Cu
Item
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
D11
D12
Physical Circuit Dimension
W (Mil)
35
318
58
500
124
530
770
200
48
272
35
35
L (Mil)
210
158
114
195
161
156
196
176
92
119
150
200
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at
www.microsemi.com
or contact our factory direct.
2731-100MR3
2731-100M
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at
www.microsemi.com
or contact our factory direct.
