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2931-150

RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, HERMETIC SEALED, CERAMIC, 55KS-1, 2 PIN

器件类别:分立半导体    晶体管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

下载文档
器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
包装说明
FLANGE MOUNT, R-CDFM-F2
针数
2
Reach Compliance Code
compli
其他特性
HIGH RELIABILITY
外壳连接
BASE
最大集电极电流 (IC)
15 A
配置
SINGLE
最高频带
S BAND
JESD-30 代码
R-CDFM-F2
JESD-609代码
e0
元件数量
1
端子数量
2
最高工作温度
200 °C
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子面层
TIN LEAD
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
2931-150R3
2931-150
150 Watts, 38 Volts, 50µs, 4%
Radar 2900-3100 MHz
Preliminary
GENERAL DESCRIPTION
The 2931-150 is an internally matched, COMMON BASE bipolar transistor
capable of providing 150 Watts of pulsed RF output power at 50µs pulse width,
4% duty factor across the 2900 to 3100 MHz band.
The transistor prematch
and test fixture has been optimized through the use of Pulsed Automated
Load Pull.
This hermetic ceramic sealed transistor is specifically designed for
S-band radar applications. It utilizes gold metallization and emitter ballasting to
provide high reliability and supreme ruggedness.
CASE OUTLINE
55KS-1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C
1
500 W
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
)
65
Emitter to Base Voltage (BV
ebo
)
3.0
Collector Current (I
c
)
15.0
Maximum Temperatures
Storage Temperature
-65 to +200
Operating Junction Temperature
+200
V
V
A
°C
°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
P
out
P
in
P
g
η
c
R
l
P
d
t
r
VSWR
l
CHARACTERISTICS
Power Output
Power Input
Power Gain
Collector Efficiency
Return Loss
Pulse Droop
Rise Time
Load Mismatch Tolerance
1
TEST CONDITIONS
F=2900-3100 MHz
V
cc
= 38 Volts
Pulse Width = 50 µs
Duty Factor = 4 %
MIN
150
21.7
8.3
45
7
8.7
50
0.6
150
2:1
TYP
MAX
UNITS
W
W
dB
%
dB
dB
nS
F = 3100 MHz, P
o
= 150W
FUNCTIONAL CHARACTERISTICS @ 25°C
BV
ebo
BV
ces
h
FE
θjc
1
NOTE:
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Thermal Resistance
1. At rated output power and pulse conditions
Ie = 30 mA
Ic = 120 mA
Vce = 5V, Ic = 600 mA
3.0
65
18
V
V
60
0.35
°C/W
Issue 2, April 2005
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
2931-150R3
2931-150
Vcc = 38 Volts, Pulse Width = 50µs, Duty = 4 %
G2754-2,
Product is in characterization, additional curves will be inserted at the conclusion.
Power Output vs Power Input
Power
Output[dBm]
53.0
52.5
52.0
51.5
51.0
50.5
50.0
49.5
49.0
48.5
48.0
47.5
47.0
46.5
46.0
45.5
45.0
38
.5
39
.0
39
.5
40
.0
4 0 41. 41.
.5
0
5
42
.0
42
.5
43
.0
43
44
44
45
.5
.0 .5
.0
Power Input[dBm]
2.9 GHz
3.0 GHz
3.1 GHz
150W Line
180W Line
Impedance curves will be added at the completion of the characterization.
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
2931-150R3
2931-150
Test Circuit
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
2931-150R3
2931-150
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
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