140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
2N2857
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
•
•
•
Silicon NPN, To-72 packaged UHF Transistor
1.6 GHz Current-Gain Bandwidth Product @ 5mA IC
2
Maximum Unilateral Gain = 13 dB (typ) @ 500 MHz
1
4
3
1. Emitter
2. Base
3. Collector
4. Case
TO-72
DESCRIPTION:
The 2N2857 is a silicon NPN transistor, designed for UHF equipment. Applications
include low noise amplifier; oscillator, and mixer applications.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
°
C)
Symbol
Parameter
Value
Unit
V
CEO
V
CBO
V
EBO
P
D
I
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Maximum Device Dissipation
Collector Current
15
30
2.5
200
40
V
V
V
mW
mA
Thermal Data
R
TH(J-C)
Thermal Resistance Junction-case
0.88
º C/mW
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
2N2857
ELECTRICAL SPECIFICATIONS (Tcase = 25
°
C)
STATIC
Symbol
BVCEO
BVCBO
BVEBO
ICBO
HFE
Test Conditions
Min.
Collector-Emitter Breakdown Voltage
(IC = 3.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC=1.0
µAdc,
IE=0)
Emitter-Base Breakdown Voltage
(IE = 10
µAdc,
IC = 0)
Collector Cutoff Current
(VCE = 15 V, IE = 0 V)
DC Current Gain
(IC = 3.0 mAdc, VCE = 1.0 V)
15
30
2.5
-
30
Value
Typ.
-
-
-
-
-
Max.
-
-
-
.01
150
Unit
V
V
V
µA
DYNAMIC
Symbol
f
T
NF
Test Conditions
Current-Gain - Bandwidth Product
(IC = 5.0 mAdc, VCE = 6 V, f = 100 MHz)
Noise Figure (50 Ohms)
(IC = 1.5 mAdc, VCE = 6 V, f = 500 MHz)
Value
Min.
Typ.
1.6
5.5
Max.
-
Unit
GHz
dB
FUNCTIONAL
Symbol
Test Conditions
Maximum Unilateral Gain
Maximum Available Gain
Insertion Gain
IC = 12 mAdc, VCE = 10V,
f = 500 MHz
IC = 12 mAdc, VCE = 10V,
f = 500 MHz
IC = 12 mAdc, VCE = 10V,
f = 500 MHz
Value
Min.
-
-
9.5
Typ.
13
13.5
10.5
Max.
-
-
-
Unit
dB
dB
dB
G
U max
MAG
2
|S
21
|
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
2N2857
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 12 mA
f
S11
(MHz)
100
200
300
400
500
600
700
800
900
1000
|S11|
0.457
0.291
0.233
0.212
0.184
0.173
0.192
0.165
0.261
0.083
∠φ
-44
-56
-60
-68
-76
-79
-89
-96
-121
149
S21
|S21|
12.49
8.06
5.3
3.88
3.36
2.97
2.39
1.89
2.72
1.27
∠φ
122
101
89
80
80
69
61
57
60
39
S12
|S12|
0.012
0.018
0.024
0.032
0.037
0.043
0.044
0.055
0.068
0.064
∠φ
63
55
81
55
49
46
44
43
29
18
S22
|S22|
0.823
0.712
0.728
0.723
0.711
0.717
0.72
0.731
0.746
0.749
∠φ
-23
-35
-46
-60
-73
-86
-100
-115
-131
-148
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
2N2857
.
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
