2N2857
2N3839
NPN SILICON RF TRANSISTORS
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2857 and 2N3839
are silicon NPN RF transistors designed for VHF/UHF
amplifier, oscillator and converter applications.
MARKING: FULL PART NUMBER
TO-72 CASE
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
VEBO
IC
PD
PD
TJ, Tstg
30
15
2.5
40
200
300
-65 to +200
UNITS
V
V
V
mA
mW
mW
°C
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
2N2857
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=15V
-
10
ICBO
VCB=15V, TA=150°C
-
1.0
BVCBO
BVCEO
BVEBO
hFE
fT
Cob
Po
Gpe
NF
rb’Cc
IC=1.0μA
IC=3.0mA
IE=10μA
VCE=1.0V, IC=3.0mA
VCE=6.0V, IC=5.0mA, f=100MHz
VCB=10V, IE=0, f=100kHz to 1.0MHz
VCB=10V, IC=12mA, f=500MHz
VCE=6.0V, IC=1.5mA, f=450MHz, RS=50Ω
VCE=6.0V, IC=1.5mA, f=450MHz, RS=50Ω
VCB=6.0V, IC=2.0mA, f=31.9MHz
30
15
2.5
30
1.0
-
30
12.5
-
4.0
-
-
-
150
1.9
1.0
-
19
4.5
15
2N3839
MIN
MAX
-
10
-
30
15
2.5
30
1.0
-
30
12.5
-
1.0
1.0
-
-
-
150
2.0
1.0
-
19
3.9
15
UNITS
nA
μA
V
V
V
GHz
pF
mW
dB
dB
ps
R1 (31-January 2013)
2N2857
2N3839
NPN SILICON RF TRANSISTORS
TO-72 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
4) Case
MARKING:
FULL PART NUMBER
R1 (31-January 2013)
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nd
day air)
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REQUESTING PRODUCT PLATING
1.
2.
If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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