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2N2857

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72

器件类别:分立半导体    晶体管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

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器件:2N2857

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
包装说明
M244, 4 PIN
Reach Compliance Code
_compli
ECCN代码
EAR99
其他特性
LOW NOISE
最大集电极电流 (IC)
0.04 A
集电极-发射极最大电压
15 V
配置
SINGLE
最高频带
ULTRA HIGH FREQUENCY BAND
JEDEC-95代码
TO-72
JESD-30 代码
O-MBCY-W4
JESD-609代码
e0
元件数量
1
端子数量
4
封装主体材料
METAL
封装形状
ROUND
封装形式
CYLINDRICAL
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
NO
端子面层
Tin/Lead (Sn/Pb)
端子形式
WIRE
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
1600 MHz
Base Number Matches
1
文档预览
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF555
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
Specified @ 12.5 V, 470 MHz Characteristics
Output Power = 1.5 W
Minimum Gain = 11 dB
Efficiency 60% (Typ)
Cost Effective PowerMacro Package
Electroless Tin Plated Leads for Improved Solderability
Power Macro
Designed primarily for wideband large signal stages in
the UHF frequency range.
DESCRIPTION:
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Value
16
30
3.0
500
Unit
Vdc
Vdc
Vdc
mA
Thermal Data
P
D
Total Device Dissipation @ TC = 75ºC
Derate above 75ºC
3.0
40
Watts
mW/ ºC
MSC1316.PDF 10-25-99
MRF555
ELECTRICAL SPECIFICATIONS (Tcase = 25
°
C)
STATIC
Symbol
Test Conditions
Min.
BV
CEO
BV
CES
BV
EBO
I
CES
HFE
Collector-Emitter Breakdown Voltage
(I
C
= 5 mAdc, I
B
= 0)
Collector-Emitter Sustaining Voltage
(I
C
= 5.0 mAdc, I
B
= 0)
Emitter-Base Breakdown Voltage
(I
E
= 0.1 mAdc, I
C
= 0)
Collector Cutoff Current
(V
CE
= 15 Vdc, V
BE
= 0 Vdc)
DC Current Gain
(I
C
= 100 mA, V
CE
= 5.0 Vdc) Both
16
30
3.0
-
50
Value
Typ.
-
-
-
-
-
Max.
-
-
-
5
200
Unit
Vdc
Vdc
Vdc
mA
-
DYNAMIC
Symbol
Test Conditions
Min.
C
OB
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
-
Value
Typ.
---
Max.
5.5
Unit
pF
MSC1316.PDF 10-25-99
MRF555
FUNCTIONAL
Symbol
Power Gain
G
PE
Collector Efficiency
η
Test Conditions
Min.
Test Circuit-Figure 1
Pout = 1.5 W, VCE =12.5Vdc
f = 470 MHz
Test Circuit-Figure 1
Pout = 1.5 W, VCE =12.5Vdc
f = 175 MHz
Test Circuit-Figure 1
Pout = 1.5 W, VCE =12.5Vdc
f = 175 MHz
11
Value
Typ.
12.5
Max.
-
Unit
dB
50
60
-
%
ψ
Load Mismatch
VSWR
10:1 All Phase Angles
No Degradation in Output Power
-
MSC1316.PDF 10-25-99
MRF555
RF Low Power PA, LNA, and General Purpose Discrete Selector Guide
GPE Freq (MHz)
Efficiency (%)
IC max (mA)
Gu Max (dB)
Ccb(pF)
BVCEO
IC max (mA)
3.5
20 400
30 400
30 400
1
1
3
1
1
1
2.6
12
15
50
40
25 150
15
15
12
30
50
35
15 100
15 200
15 200
1
15
15
12
30
50
40
16 200
2.2
0.45
1
1
1
17 200
10 100
10
12
15
70
35
30
Pout (watts)
Freq (MHz)
NF (dB)
NF IC (mA)
NF VCE
Package
Device
SO-8
TO-39
POWER MACRO
POWER MACRO
TO-39
TO-39
TO-72
MACRO X
MACRO X
TO-39
SO-8
POWER MACRO
POWER MACRO
MACRO X
MACRO X
SO-8
POWER MACRO
POWER MACRO
MRF4427, R2
2N4427
MRF553
MRF553T
MRF607
2N6255
2N5179
MRF559
MRF559
2N3866A
MRF555
MRF555T
MRF559
MRF559
MRF8372,R1,R2
MRF557
MRF557T
NPN 175
NPN 175
NPN 175
NPN 175
NPN 175
NPN 175
NPN 200
NPN 512
NPN 512
NPN 400
NPN 470
NPN 470
NPN 870
NPN 870
NPN 870
NPN 870
NPN 870
0.15
1
1.5
1.5
1.75
3
18
10
11.5
11.5
11.5
7.8
20
60
50
60
50
50
50
12
12
12.5
12.5
12.5
12.5
6
20
20
16
16
16
18
12
16
16
30
30
16
16
16
16
16
16
16
400
400
500
500
330
1000
50
150
150
400
400
400
400
150
150
200
400
400
TO-39
TO-39
SO-8
TO-72
TO-72
TO-39
TO-72
TO-72
MACRO T
2N5109
MRF5943C
NPN
NPN
200
200
200
200
300
300
450
450
500
500
500
500
500
500
500
500
500
3
3.4
3.4
4.5
5.5
7.5
1.5
5
1.9
2
2
2
2.4
2.5
2.5
2.5
3
1.3
1.5
2.5
3
10
30
30
1.5
50
50
5
2
2
10
50
50
2
2
5
50
90
5
10
2
2
15
15
15
6
6
15
6
5
5
10
10
10
10
5
10
10
15
6
6
5
10
15
11
14
10
8
10
15.5
14
15
11
GN (dB)
12
1200
11.4 1 0 0 0
15
17
13
5.5
11
14
1300
900
1600
4600
4000
1400
MRF5943, R1, R2 NPN
2N5179
2N2857
MRF517
MRF904
2N6304
BFR91
BFR96
NPN
NPN
NPN
NPN
NPN
NPN
NPN
16.5 5 0 0 0
14.5
500
0.5
0.5
1
1
1.5
1.5
0.5
0.5
0.75
1.5
1.5
10
13
10
10
11
11
6.5
9.5
8
8
8
65
60
45
45
50
50
70
65
55
55
55
7.5
12.5
28
28
12.5
12.5
7.5
12.5
12.5
12.5
12.5
MACRO T
SO-8
MACRO X
Macro
TO-72
TO-72
MACRO X
TO-39
MACRO X
MACRO X
MACRO T
MACRO T
MRF5812, R1, R2 NPN
MRF581A
BFR90
BFY90
MRF914
MRF581
MRF586
MRF951
MRF571
BFR91
BFR90
NPN
NPN
NPN
NPN
NPN
NPN
17.8 5 0 0 0
15
18
20
15
5000
5000
1300
4500
MRF3866, R1, R2 NPN 400
17.8 5 0 0 0
14.5 4 5 0 0
17
8000
8000
11
5000
NPN 1 0 0 0
NPN 1 0 0 0
NPN 1 0 0 0
NPN 1 0 0 0
12.5 5 0 0 0
TO-39
TO-39
MRF545
MRF544
PNP
NPN
14
13.5
1400
1500
Ftau (MHz)
4
Device
GPE (dB)
GPE VCC
Package
Type
Type
2
70 400
70 400
RF (Low Power PA / General Purpose) Selection Guide
RF (LNA / General Purpose) Selection Guide
Low Cost RF Plastic Package Options
1
8
2
4
3
3
2
4
1
MSC1316.PDF 10-25-99
Macro T
Macro X
Power Macro
SO-8
MRF555
PACKAGE MECHANICAL DATA
PIN 1. COLLECTOR
2. EMITTER
3. BASE
4. EMITTER
1.
4.
2.
3.
MSC1316.PDF 10-25-99
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