2N3904
Plastic-Encapsulate Transistors
NPN
TO—92
Features
·
NPN silicon epitaxial planar transistor for switching and
Amplifier applications
·
As complementary type, the PNP transistor 2N3906 is
Recommended
·
This transistor is also available in the SOT-23 case with
the type designation MMBT3904LT1
1.EMITTER 2.BASE 3. COLLECTOR
MAXIMUM RATINGS* T
A
=25
℃
unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Value
60
40
6
0.2
0.625
-55-150
Units
V
V
V
A
W
℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off
Collector cut-off
Emitter cut-off
current
current
current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE
（
1
）
h
FE
（
2
）
DC current gain
h
FE
（
3
）
h
FE
（
4
）
h
FE
（
5
）
Collector-emitter saturation voltage
V
CE(sat)
Test
unless
otherwise
MIN
60
40
6
specified）
TYP
MAX
UNIT
V
V
V
0.1
0.1
0.1
μA
μA
μA
conditions
Ic=10μA
，
I
E
=0
I
C
= 1 mA ,
I
B
=0
I
E
= 10μA， I
C
=0
V
CB
=60 V , I
E
=0
V
CE
= 40 V , I
B
=0
V
EB
= 5 V ,
V
CE
=1 V,
V
CE
=1 V,
V
CE
=1 V,
V
CE
=1 V,
V
CE
=1 V,
I
C
=0
I
C
=0.1mA
I
C
=1mA
I
C
=10mA
I
C
=50mA
I
C
=100mA
40
70
100
60
30
0.2
0.3
0.85
0.65
0.95
4
8
5
V
V
V
V
pF
pF
dB
400
I
C
=10 mA, I
B
=1 mA
I
C
=50 mA, I
B
=5 mA
I
C
= 10 mA, I
B
=1 mA
I
C
=50 mA, I
B
= 5 mA
V
CB
=5V,I
E
=0,f=100KHz
V
EB
=0.5V,I
E
=0,f=100KHz
V
CE
=
5
V,I
c
=
100
μA,
f=
1
KHz,RS=
1
KΩ
V
CE
= 20 V, I
C
= 10mA
Base-emitter saturation voltage
Output capacitance
Input Capacitance
Noise figure
V
BE(sat)
Cobo
Cibo
NF
Transition frequency
f
T
f =
100MHz
300
MHz
Delay Time
Rise Time
Storage Time
Fall Time
td
tr
ts
tf
OF
h
FE(3)
O
100-200
Vcc=3V,V
BE
=0.5V,
Ic=10mA,I
B1
=1mA
Vcc=3V, Ic=10mA
I
B1
=I
B2
=1mA
35
35
200
50
ns
ns
ns
ns
CLASSIFICATION
Rank
Range
Y
200-300
G
300-400
Typical Characteristics
2N3904
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