Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N4921 2N4922 2N4923
DESCRIPTION
・With
TO-126 package
・Complement
to type 2N4918/4919/4920
・Excellent
safe operating area
・Low
collector saturation voltage
APPLICATIONS
・For
driver circuits ,switching ,and
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
固
导½
电半
PARAMETER
V
CBO
V
CEO
INC
Collector-base voltage
GE
HAN
2N4921
2N4922
CON
EMI
S
CONDITIONS
Open emitter
Open base
Open collector
TOR
DUC
VALUE
40
60
80
40
60
80
5
1
3
1
UNIT
V
2N4923
2N4921
2N4922
2N4923
Collector-emitter voltage
V
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
V
A
A
A
W
℃
℃
T
C
=25℃
30
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
4.16
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N4921
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N4922
2N4923
V
CEsat
V
BEsat
V
BE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
2N4921
I
CEO
Collector cut-off current
2N4922
2N4923
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
C
OB
Collector cut-off current
I
C
=1.0A ;I
B
=0.1A
I
C
=1.0A ;I
B
=0.1A
I
C
=1A ; V
CE
=1V
V
CE
=20V; I
B
=0
V
CE
=30V; I
B
=0
V
CE
=40V; I
B
=0
I
C
=0.1A; I
B
=0
2N4921 2N4922 2N4923
CONDITIONS
MIN
40
60
80
TYP.
MAX
UNIT
V
0.6
1.3
1.3
V
V
V
0.5
mA
固
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Transition frequency
Output capacitance
导½
电半
V
CB
= Rated V
CBO
;I
E
=0
INC
GE
HAN
CON
EMI
S
V
EB
=5V; I
C
=0
I
C
=50mA ; V
CE
=1V
I
C
=500mA ; V
CE
=1V
I
C
=1A ; V
CE
=1V
I
C
=250mA ; V
CE
=10V;f=1MHz
f=100kHz ; V
CB
=10V;I
E
=0
V
CE
= Rated V
CEO
; V
BE(off)
=1.5V
T
C
=125℃
TOR
DUC
0.1
0.1
0.5
1.0
40
30
10
3.0
100
150
mA
mA
mA
MHz
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N4921 2N4922 2N4923
固
导½
电半
INC
GE
HAN
CON
EMI
S
TOR
DUC
Fig.2 Outline dimensions
3
