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2N5246_J35Z

IC RF amp N-CH 30v TO-92

器件类别:半导体    分立半导体   

厂商名称:Fairchild

厂商官网:http://www.fairchildsemi.com/

器件标准:  

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器件参数
参数名称
属性值
Datasheets
2N5246
Product Photos
TO-92-3(StandardBody),TO-226_straightlead
Standard Package
2,000
Category
Discrete Semiconductor Products
Family
RF FETs
系列
Packaging
Bulk
Transistor Type
N-Channel JFET
电流额定值
Current Rating
7mA
Voltage - Rated
30V
封装 / 箱体
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
文档预览
2N5246
2N5246
N-Channel RF Amplifier
• This device is designed for HF/VHF mixer/amplifier and applications
where process 50is not adequate. Sufficient gain and low noise for
sensitive receivers.
• Sourced from process 90.
TO-92
1
1. Gate 2. Source 3. Drain
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
Symbol
V
DG
V
GS
I
GF
T
J
, T
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Parameter
Ratings
30
-30
10
-55 ~ 150
Units
V
V
mA
°C
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)GSS
I
GSS
V
GS(off)
I
DSS
gfs
goss
Parameter
Test Condition
I
G
= 1.0µA, V
DS
= 0
V
GS
= 25V, V
DS
= 0
V
DS
= 15V, I
D
= 1.0nA
V
DS
= 15V, V
GS
= 0
V
GS
= 0V, V
DS
= 15V, f = 1.0kHz
V
GS
= 0V, V
DS
= 15V, f = 1.0kHz
-0.5
1.5
3000
Min.
-30
-1.0
-4.0
7.0
9500
50
Max.
Units
V
nA
V
mA
µmhos
µmhos
Gate-Source Breakdwon Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Zero-Gate Voltage Drain Current *
Forward Transferconductance
Common- Source Output Conductance
On Characteristics
Small Signal Characteristics
* Pulse Test: Pulse
300µs
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol
P
D
R
θJC
R
θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003
2N5246
Package Dimensions
TO-92
4.58
–0.15
+0.25
0.46
14.47
±0.40
±0.10
4.58
±0.20
1.27TYP
[1.27
±0.20
]
3.60
±0.20
1.27TYP
[1.27
±0.20
]
0.38
–0.05
+0.10
3.86MAX
1.02
±0.10
0.38
–0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT Quiet Series™
ActiveArray™
FAST
®
FASTr™
Bottomless™
FRFET™
CoolFET™
CROSSVOLT™
GlobalOptoisolator™
GTO™
DOME™
HiSeC™
EcoSPARK™
2
CMOS™
I
2
C™
E
EnSigna™
ImpliedDisconnect™
FACT™
ISOPLANAR™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
DISCLAIMER
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER
®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
®
TINYOPTO™
TruTranslation™
UHC™
UltraFET
®
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2003 Fairchild Semiconductor Corporation
Rev. I5
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参数对比
与2N5246_J35Z相近的元器件有:2N5246-D74Z、2N5246_D74Z。描述及对比如下:
型号 2N5246_J35Z 2N5246-D74Z 2N5246_D74Z
描述 IC RF amp N-CH 30v TO-92 Transistor IC amp RF N-chan 30v 10ma TO-92
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