JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
2N5400
FEATURE
TRANSISTOR (PNP)
TO-92
Switching and
Amplification
in
High Voltage
Applications such as
Telephony
Low
Current(max.
600mA)
High
Voltage(max.130v)
1.EMITTER
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-130
-120
-5
-0.6
0.625
150
-55-150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE1
DC current gain
h
FE2
h
FE3
Collector-emitter saturation voltage
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
f
T
C
ob
Test
conditions
Min
-130
-120
-5
-0.1
-0.1
30
40
40
-0.2
-0.5
-1
-1
100
6
V
V
V
V
MHz
pF
180
Typ
Max
Unit
V
V
V
I
C
=-100μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
= -10μA, I
C
=0
V
CB
= -100 V,
I
E
=0
μ
A
μ
A
V
EB
= -3 V, I
C
=0
V
CE
= -5 V,
I
C
=-1mA
V
CE
= -5 V, I
C
= -10mA
V
CE
= -5 V,
I
C
=-50mA
I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
V
CE
=-10V,
f =30MHz
I
C
=-10mA
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CB
=-10V,I
E
=0,f=1MHz
A,May,2011
电子工程世界
