2N5551 / MMBT5551 — NPN General-Purpose Amplifier
June 2013
2N5551 / MMBT5551
NPN General-Purpose Amplifier
Description
This device is designed for general-purpose high-voltage
amplifiers and gas discharge display drivers.
2N5551
MMBT5551
3
2
TO-92
1
SOT-23
Marking: 3S
1. Base 2. Emitter 3. Collector
Ordering Information
(1)
Part Number
2N5551TA
2N5551TFR
2N5551TF
2N5551BU
MMBT5551
Top Mark
5551
5551
5551
5551
3S
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
SOT-23 3L
Packing Method
Ammo
Tape and Reel
Tape and Reel
Bulk
Tape and Reel
Note:
1. Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base)
Suffix “-Y” means h
FE
180~240 in 2N5551 (Test condition: I
C
= 10 mA, V
CE
= 5.0 V)
© 2009 Fairchild Semiconductor Corporation
2N5551 / MMBT5551 Rev. 1.1.0
1
www.fairchildsemi.com
2N5551 / MMBT5551 — NPN General-Purpose Amplifier
Absolute Maximum Ratings
(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg(2)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Parameter
Value
160
180
6
600
-55 to +150
Units
V
V
V
mA
°C
Collector current - Continuous
Junction and Storage Temperature
Notes:
2. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
3. These ratings are based on a maximum junction temperature of 150
°C.
These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed
or low-duty cycle operations.
Thermal Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
R
θJC
R
θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum
2N5551
625
5.0
83.3
200
357
MMBT5551
350
2.8
Units
mW
mW/°C
°C/W
°C/W
© 2009 Fairchild Semiconductor Corporation
2N5551 / MMBT5551 Rev. 1.1.0
2
www.fairchildsemi.com
2N5551 / MMBT5551 — NPN General-Purpose Amplifier
Electrical Characteristics
(4)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
Off Characteristics
Parameter
Test Condition
I
C
= 1.0 mA, I
B
= 0
I
C
= 100
μA,
I
E
= 0
I
E
= 10
μA,
I
C
= 0
V
CB
= 120 V, I
E
= 0
V
CB
= 120 V, I
E
= 0, T
A
= 100°C
V
EB
= 4.0 V, I
C
= 0
I
C
= 1.0 mA, V
CE
= 5.0 V
Min.
160
180
6.0
Max.
Units
V
V
V
V
(BR)CEO
Collector-Emitter Breakdown Voltage
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
I
CBO
I
EBO
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
50
50
50
80
80
30
0.15
0.20
1.0
1.0
250
nA
μA
nA
On Characteristics
h
FE
DC Current Gain
I
C
= 10 mA, V
CE
= 5.0 V
I
C
= 50 mA, V
CE
= 5.0 V
V
CE(sat)
V
BE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 10 mA, V
CE
= 10 V,
f = 100 MHz
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
BE
= 0.5 V, I
C
= 0, f = 1.0 MHz
I
C
= 1.0 mA, V
CE
= 10 V, f = 1.0 kHz
I
C
= 250
μA,
V
CE
= 5.0 V,
R
S
=1.0 kΩ, f=10 Hz to 15.7 kHz
50
V
V
V
V
Small-Signal Characteristics
f
T
C
obo
C
ibo
H
fe
NF
Note:
4. PCB board size FR-4 76 x 114 x 0.6 T mm
3
(3.0 inch
×
4.5 inch
×
0.062 inch) with minimum land pattern size.
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Noise Figure
100
6.0
20
250
8.0
dB
MHz
pF
pF
© 2009 Fairchild Semiconductor Corporation
2N5551 / MMBT5551 Rev. 1.1.0
3
www.fairchildsemi.com
2N5551 / MMBT5551 — NPN General-Purpose Amplifier
Typical Performance Characteristics
250
125 C
100 C
200
o
o
V
CE
=5V
V
CE(SAT)
- COLLECTOR-EMITTER VOLTAGE [V]
10
?
10
h
FE
- DC CURRENT GAIN
75 C
150
o
1
β
100 C
o
25 C
100
o
125 C
o
-40 C
50
o
0.1
-40 C
0.01
1
o
25 C
o
75 C
o
0
1
10
100
1000
10
100
I
C
- COLLECTOR CURRENT [mA]
I
C
- COLLECTOR CURRENT [mA]
Figure 1. Typical Pulsed Current Gain vs. Collector
Current
1.0
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
1.2
V
BE(SAT)
- BASE-EMITTER VOLTAGE [V]
V
BE(ON)
- BASE-EMITTER VOLTAGE [V]
β
-40
o
C
0.8
1.0
T
A
= -40 C
T
A
= 25 C
o
o
25 C
o
0.8
0.6
125 C
100 C
75 C
o
o
o
0.6
T
A
= 75 C
T
A
= 100 C
o
o
0.4
0.4
T
A
= 125 C
o
0.2
0.2
1
10
100
0.0
1
10
100
1000
I
C
- COLLECTOR CURRENT [mA]
I
C
- COLLECTOR CURRENT [mA]
Figure 3. Base-Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base-Emitter On Voltage vs. Collector
Current
100
I
CBO
- COLLE CTOR CURRENT (nA)
50
V
CB
= 100V
CAPACITANCE [pF]
10
10
C
IB
C
OB
1
25
50
75
100
T
A
- AMBIE NT TEMP ERATURE (
°
C)
125
1
0
1
2
3
4
5
6
7
8
9
10
Ω
REVERSE BIAS VOLTAGE [V]
Figure 5. Collector Cut-Off Current vs. Ambient
Temperature
Figure 6. Input and Output Capacitance vs. Reverse
Voltage
© 2009 Fairchild Semiconductor Corporation
2N5551 / MMBT5551 Rev. 1.1.0
4
www.fairchildsemi.com
2N5551 / MMBT5551 — NPN General-Purpose Amplifier
Typical Performance Characteristics
(Continued)
BV
CER
- BREAKDOWN VOLTAGE (V)
260
h
FE
- SMALL SIGNAL CURRENT GAIN
Between Emitter-Base
I
C
= 1.0 mA
vs Collector Current
16
FREG = 20 MHz
V
CE
= 10V
240
220
200
180
160
0.1
12
8
4
1
10
100
1000
0
RESISTANCE (k
Ω
)
1
10
I
C
- COLLECTOR CURRENT (mA)
50
Figure 7. Collector- Emitter Breakdown Voltage
with Resistance between Emitter-Base
700
Figure 8. Small Signal Current Gain vs. Collector
Current
P
D
- POWER DISSIPATION (mW)
600
500
400
300
200
100
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
SOT-23
TO-92
Figure 9. Power Dissipation vs. Ambient
Temperature
© 2009 Fairchild Semiconductor Corporation
2N5551 / MMBT5551 Rev. 1.1.0
5
www.fairchildsemi.com
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