SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5869 2N5870
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
APPLICATIONS
·For medium-speed switching and
amplifier applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
PARAMETER
2N5869
V
CBO
Collector-base voltage
2N5870
2N5869
V
CEO
Collector-emitter voltage
2N5870
V
EBO
I
C
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
80
5
5
87.5
150
-65~200
V
A
W
Open emitter
80
60
V
CONDITIONS
VALUE
60
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.17
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5869 2N5870
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2N5869
I
C
=0.1A ;I
B
=0
2N5870
I
C
=5A;I
B
=1A
I
C
=5A; I
B
=1A
V
CB
=ratedV
CBO
; I
B
=0
2N5869
I
CEO
Collector cut-off current
2N5870
I
EBO
h
FE
f
T
Emitter cut-off current
DC current gain
Trainsistion frequency
V
CE
=40V; I
B
=0
V
EB
=5V; I
C
=0
I
C
=1.5A ; V
CE
=4V
I
C
=0.5A ; V
CE
=10V;f=1MHz
20
4
1.0
100
MHz
mA
V
CE
=30V; I
B
=0
2.0
mA
80
1.0
1.5
1.0
V
V
mA
CONDITIONS
MIN
60
V
TYP.
MAX
UNIT
SYMBOL
V
CEO(SUS)
Collector-emitter
sustaining voltage
V
CEsat
V
BEsat
I
CBO
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N5869 2N5870
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
