2N5950 — N-Channel RF Amplifier
September 2007
2N5950
N-Channel RF Amplifier
• This device is designed primarily for electronic switching applications such as low on resistance analog switching.
• Sourced from process 50.
TO-92
1
1. Gate 2. Source 3. Drain
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
Symbol
V
DG
V
GS
I
GF
T
J
, T
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Parameter
Value
30
-30
10
-55 ~ 150
Units
V
V
mA
°C
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
T
a
=25°C unless otherwise noted
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
© 2007 Fairchild Semiconductor Corporation
2N5950 Rev. 1.0.0
1
www.fairchildsemi.com
2N5950 — N-Channel RF Amplifier
Electrical Characteristics*
T
a
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)GSS
I
GSS
V
GS(off)
V
GS(f)
V
GS
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cut-off Voltage
Gate-Source Forward Voltage
Gate-Source Forward Voltage
I
G
= 1.0μA, V
DS
= 0
V
GS
= 25V, V
DS
= 0, T = 25°C
T = 100°C
V
DS
= 15V, I
D
= 100nA
I
G
= 1.0mA
V
DS
= 15V, I
D
= 1mA
-1.8
-2.5
-30
-1.0
-200
-6.0
1.0
-5.0
V
nA
nA
V
V
V
Parameter
Test Condition
Min.
Max.
Units
On Characteristics
*I
DSS
R
DS
(on)
Zero-Gate Voltage Drain Current *
Drain-Source On Resistance
V
DS
= 15V, V
GS
= 0
I
D
= 476μA, f = 1.0kHz
10
15
210
mA
Ω
Small Signal Characteristics
g
fs
C
iss
C
rss
Forward Transferconductance
Input Capacitance
Reverse Transfer Capacitance
V
DS
= 15V, V
GS
= 0V, f = 100MHz
V
DS
= 15V, V
GS
= 0V, f = 1kHz
V
DS
= 15V, V
GS
= 0V, f = 1.0MHz
V
DS
= 15V, V
GS
= 0V, f = 1.0MHz
3000
3500
7500
6
2
μ/Ω
pF
pF
* Pulse Test: Pulse Width
≤
300μs, Duty Cycle
=
2%
© 2007 Fairchild Semiconductor Corporation
2N5950 Rev. 1.0.0
2
www.fairchildsemi.com
2N5950
2N5950 N-Channel RF Amplifier
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
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1.
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when properly used in accordance with instructions for use
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I30
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
© 2007 Fairchild Semiconductor Corporation
2N5950 Rev. 1.0.0
3
www.fairchildsemi.com
