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2N6673

Silicon NPN Power Transistors

厂商名称:ISC

厂商官网:http://www.iscsemi.cn/

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器件:2N6673

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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・Low
saturation voltage
・Fast
switching speed
・High
voltage ratings
APPLICATIONS
・Off-line
power supplies
・High-voltage
inverters
・Switching
regulators
PINNING
PIN
1
2
3
Base
Emitter
DESCRIPTION
2N6671 2N6672 2N6673
Fig.1 simplified outline (TO-3) and symbol
Collector
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
固电
IN
导½
2N6671
2N6672
2N6673
CONDITIONS
V
CBO
Collector-base voltage
ANG
CH
MIC
E SE
Open emitter
Open base
OR
UCT
ND
O
VALUE
450
550
650
300
350
400
UNIT
V
2N6671
2N6672
V
CEO
Collector-emitter voltage
V
2N6673
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
8
8
10
4
150
200
-65~200
V
A
A
A
W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6671
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6672
2N6673
V
CEsat-1
V
CEsat-2
V
BEsat
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
2N6671
I
CEV
Collector cut-off current
2N6672
I
C
=5A; I
B
=1A
I
C
=8A ;I
B
=4A
I
C
=5A; I
B
=1A
I
C
=0.2A ;I
B
=0
CONDITIONS
2N6671 2N6672 2N6673
MIN
300
350
400
TYP.
MAX
UNIT
V
1.0
2.0
1.6
V
V
V
V
CE
=450V; V
BE(off)
=-1.5V
V
CE
=550V; V
BE(off)
=-1.5V
V
CE
=650V; V
BE(off)
=-1.5V
V
EB
=8V; I
C
=0
0.1
mA
I
EBO
h
FE
C
OB
f
T
电半
导½
2N6673
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
HA
INC
ES
NG
I
C
=5A ; V
CE
=3V
I
E
=0 ; V
CB
=10V;f=0.1MHz
15
MIC
E
OR
UCT
ND
O
2.0
40
10
300
60
mA
pF
MHz
I
C
=0.2A ; V
CE
=10V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.17
UNIT
℃/W
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6671 2N6672 2N6673
固电
IN
导½
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
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参数对比
与2N6673相近的元器件有:2N6672、2N6671。描述及对比如下:
型号 2N6673 2N6672 2N6671
描述 Silicon NPN Power Transistors Silicon NPN Power Transistors Silicon NPN Power Transistors
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器件捷径:
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