2N7002
60V N-Channel Enhancement Mode MOSFET
0.006(0.15)MIN.
0.008(0.20)
0.003(0.08)
0.044(1.10)
0.035(0.90)
0.020(0.50)
0.013(0.35)
FEATURES
• R
DS(ON)
, V
GS
@10V,I
DS
@500mA=5
• R
DS(ON)
, V
GS
@4.5V,I
DS
@75mA=7.5
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• Lead free in comply with EU RoHS 2011/65/EU directives
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.004(0.10)
0.000(0.00)
0.120(3.04)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
MECHANICALDATA
• Case : SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx. Weight : 0.0003 ounces, 0.008 grams
• Marking : S72
Maximum Ratings and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA M E TE R
D r a i n- S o ur c e Vo l t a g e
G a t e - S o ur c e Vo l t a g e
C o nt i nuo us D r a i n C ur r e nt
P ul s e d D r a i n C ur r e nt
1)
S ym b o l
V
D S
V
GS
I
D
I
D M
T
A
= 2 5
O
C
T
A
= 7 5
O
C
P
D
T
J
, T
S T G
R
θ
J A
Li mi t
60
+20
250
1300
350
210
-5 5 to + 1 5 0
357
U ni t s
V
V
mA
mA
mW
O
M a xi m um P o w e r D i s s i p a t i o n
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
Juncti on-to Ambi ent Thermal Resi stance(PC B mounted)
2
C
O
C /W
Note:1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
August 29,2013-REV.03
PAGE . 1
2N7002
ELECTRICALCHARACTERISTICS
P a ra me te r
S ta ti c
D r a i n- S o ur c e B r e a k d o w n Vo l t a g e
G a t e Thr e s ho l d Vo l t a g e
D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e
D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e
Ze r o G a t e Vo l t a g e D r a i n C ur r e nt
Gate Body Leakage
Forward Transconductance
Dynamic
To t a l G a t e C h a r g e
G a t e - S o ur c e C ha r g e
G a t e - D r a i n C ha r g e
Tu r n - O n Ti m e
Tu r n - O f f Ti m e
In p u t C a p a c i t a n c e
O ut p ut C a p a c i t a nc e
R e v e r s e Tr a n s f e r C a p a c i t a n c e
S o ur c e - D r a i n D i o d e
M a x. D i o d e F o r w a r d C ur r e nt
D i o d e F o rwa rd Vo lta g e
I
s
V
SD
-
I
S
= 2 5 0 m A , V
G S
= 0 V
-
-
-
0 .9 3
250
1 .2
mA
V
Q
g
Q
gs
Q
gd
t
on
t
o ff
C
iss
C
oss
C
rss
V
D S
= 2 5 V , V
GS
= 0 V
f=1 .0 MH
Z
V
DD
=10V , R
L
=20
Ω
I
D
=500mA , V
GEN
=10V
R
G
=10
Ω
V
D S
= 1 5 V , I
D
= 5 0 0 m A
V
DD
=4.5V
-
-
-
-
-
-
-
-
0 .6
0 .1
0 .0 8
9
21
-
-
-
0 .7
-
-
15
ns
26
50
25
5
pF
nC
B V
DSS
V
G S ( t h)
R
D S ( o n)
R
D S ( o n)
I
D S S
I
G S S
g
fS
V
G S
= 0 V , I
D
= 1 0 u A
V
D S
= V
G S
, I
D
= 2 5 0 u A
V
GS
=4.5V, I
D
=75mA
V
GS
=10V, I
D
=500mA
V
DS
=60V, V
GS
=0V
V
G S
=+ 2 0 V , V
D S
= 0 V
V
D S
= 1 5 V , I
D
= 2 5 0 m A
60
1
-
-
-
-
200
-
-
-
-
-
-
-
-
2 .5
7 .5
Ω
5
1
+100
-
uA
nA
mS
V
V
S ym b o l
Te s t C o n d i t i o n
M i n.
Ty p .
M a x.
U ni t s
Switching
Test Circuit
V
IN
V
DD
R
L
V
OUT
Gate Charge
Test Circuit
V
GS
V
DD
R
L
R
G
1mA
R
G
August 29,2013-REV.03
PAGE . 2
2N7002
Typical Characteristics Curves (T
A
=25 C,unless otherwise noted)
O
1.2
I
D
-
Drain-to-Source Current
(A)
1.2
V
GS
= 6.0~10V
1
0.8
0.6
0.4
0.2
0
0
5.0V
4.0V
I
D
-
Drain Source Current
(A)
1
0.8
0.6
0.4
0.2
0
0
V
DS
=10V
3.0V
o
T
J
=25 C
1
2
3
4
5
1
2
3
4
5
6
V
DS
-
Drain-to-Source Voltage (V)
V
GS
-
Gate-to-Source Voltage (V)
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output Characteristic
5
4
3
2
1
0
V
GS
=10V
V
GS
= 4.5V
10
FIG.2- Transfer Characteristic
R
DS(ON)
- On-Resistance
(
W
)
I
D
=500mA
8
6
T
J
=125
o
C
R
DS(ON)
-
On-Resistance
(
W
)
4
2
o
T
J
=25 C
0
0
0.2
0.4
0.6
0.8
1
1.2
2
3
4
5
6
7
8
9
10
I
D
-
Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
FIG.3- On Resistance vs Drain Current
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
FIG.4- On Resistance vs Gate to Source Voltage
R
DS(ON)
- On-Resistance(Normalized)
V
GS
=10V
I
D
=500mA
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (
o
C)
FIG.5- On Resistance vs Junction Temperature
August 29,2013-REV.03
PAGE . 3
2N7002
10
V
GS
- Gate-to-Source Voltage (V)
Vgs
Qg
8
6
4
2
0
0
V
DS=
15V
I
D
=500mA
Vgs(th)
Qg(th)
Qgs
Qsw
0.2
0.4
0.6
0.8
1
Qgd
Qg
Q
g
- Gate Charge (nC)
Fig.6 - Gate Charge Waveform
V
th
- G-S Th r esh o l d Vo l tag e (NORMA L IZED)
Fig.7 - Gate Charge
73
72
71
70
69
68
67
66
65
64
-50
-25
0
25
50
75
100
125
150
BV
DSS
- Breakdown Voltage (V)
1.2
1.1
1
0.9
0.8
0.7
0.6
-50
I
D
=250
m
A
I
D
= 250
m
A
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (
o
C)
T
J
- Junction Temperature (
o
C)
Fig.8 - Threshold Voltage vs Temperature
Fig.9 - Breakdown Voltage vs Junction Temperature
80
10
V
GS
= 0V
I
S
- Source Current (A)
C - Capacitance (pF)
70
60
50
40
30
20
10
Coss
Crss
0
5
10
15
Ciss
o
f = 1MHz
V
GS
= 0V
1
T
J
=25 C
T
J
=125 C
o
0.1
T
J
=-55
o
C
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0
20
25
V
SD
- Source-to-Drain Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Fig.10 - Source-Drain Diode Forward Voltage
Fig.11 - Capacitance vs Drain to Source Voltage
August 29,2013-REV.03
PAGE . 4
2N7002
MOUNTING PAD LAYOUT
0.035 MIN.
(0.90) MIN.
0.031 MIN.
(0.80) MIN.
0.043
(1.10)
0.037
(0.95)
0.043
(1.10)
0.106
(2.70)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
August 29,2013-REV.03
0.078
(2.00)
PAGE . 5
电子工程世界
