SMD Type
PNP General Purpose Transistor
2PB710A
Transistors
IC
SOT-23
Unit: mm
Features
3
+0.1
2.9
-0.1
+0.1
0.4
-0.1
High current (max. 500 mA)
+0.1
2.4
-0.1
Low voltage (max. 50 V).
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Peak collector current
Peak base current
Total power dissipation Tamb 25 ; *
Storage temperature
Junction temperature
Operating ambient temperature
Thermal resistance from junction to ambient *
* Transistor mounted on an FR4 printed-circuit board.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
R
th j-a
Rating
-60
-50
-5
-500
-1
-200
250
-65 to +150
150
-65 to +150
500
K/W
Unit
V
V
V
mA
A
mA
mW
0-0.1
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1
SMD Type
2PB710A
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
2PB710AQ
2PB710AR
2PB710AS
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector capacitance
Transition frequency
2PB710AQ
2PB710AR
2PB710AS
*. Pulse test: tp
300 ìs; ä
0.02.
f
T
I
C
= -50 mA; V
CE
= -10 V; f = 100 MHz*
V
CEsat
V
BEsat
C
c
I
C
= -500 mA; V
CE
= -10 V; *
I
C
= -300 mA; I
B
= -30 mA *
I
C
= -300 mA; I
B
= -30 mA *
I
E
= i
e
= 0; V
CB
= -10 V; f = 1 MHz
h
FE
I
C
= -150 mA; V
CE
= -10 V*
Symbol
I
CBO
I
EBO
Testconditons
I
E
= 0; V
CB
= -60 V
IE
Transistors
IC
Min
Typ
Max
-10
-5
-10
Unit
nA
ìA
nA
= 0; V
CB
= -60 V; T
j
= 150
I
C
= 0; V
EB
= -5 V
85
120
170
40
170
240
340
-600
-1.5
15
100
120
140
mV
V
pF
MHz
Marking
Type Number
Marking
2PB710AQ
DQ
2PB710AR
DR
2PB710AS
DS
2
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模拟与混合信号
