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2PC4617M

NPN general purpose transistors

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D883
BOTTOM VIEW
2PC4617M series
NPN general purpose transistors
Product data sheet
2003 Jul 15
NXP Semiconductors
Product data sheet
NPN general purpose transistors
FEATURES
Leadless ultra small plastic package
(1 mm
×
0.6 mm
×
0.5 mm)
Board space 1.3
×
0.9 mm
Power dissipation comparable to SOT23.
APPLICATIONS
General purpose small signal DC applications
Low and medium frequency AC applications
Mobile communications, digital (still) cameras, PDAs,
PCMCIA cards.
DESCRIPTION
NPN general purpose transistor in a SOT883 leadless ultra
small plastic package.
PNP complement: 2PA1776M series.
MARKING
TYPE NUMBER
2PC4617QM
2PC4617RM
2PC4617SM
MARKING CODE
D7
D8
D9
2PC4617M series
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
I
CM
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
PARAMETER
collector-emitter voltage
collector current (DC)
peak collector current
MAX.
50
100
200
UNIT
V
mA
mA
handbook, halfpage
3
3
1
2
2
1
Bottom view
MAM475
Fig.1 Simplified outline (SOT883) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
T
amb
25
°C
note 1
note 2
T
stg
T
j
T
amb
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60
μm
copper strip line.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm
2
.
2003 Jul 15
2
storage temperature
junction temperature
operating ambient temperature
−65
−65
250
430
+150
150
+150
mW
mW
°C
°C
°C
CONDITIONS
open emitter
open base
open collector
MIN.
MAX.
50
50
5
100
200
200
V
V
V
mA
mA
mA
UNIT
NXP Semiconductors
Product data sheet
NPN general purpose transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air
note 1
note 2
Notes
2PC4617M series
VALUE
500
290
UNIT
K/W
K/W
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60
μm
copper strip line.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm
2
.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
2PC4617QM
2PC4617RM
2PC4617SM
V
CEsat
C
c
f
T
Note
1. Pulse test: t
p
300
μs; δ ≤
0.02.
collector-emitter saturation voltage
collector capacitance
transition frequency
I
C
= 50 mA; I
B
= 5 mA; note 1
I
E
= i
e
= 0; V
CB
= 12 V; f = 1 MHz
V
CE
= 12 V; I
C
= 2 mA;
f = 100 MHz
CONDITIONS
V
CB
= 30 V; I
E
= 0
V
CB
= 30 V; I
E
= 0; T
j
= 150
°C
V
EB
= 4 V; I
C
= 0
V
CE
= 6 V; I
C
= 1 mA
120
180
270
100
270
390
560
200
1.5
mV
pF
MHz
MIN.
5
100
MAX.
100
UNIT
nA
μA
nA
2003 Jul 15
3
NXP Semiconductors
Product data sheet
NPN general purpose transistors
PACKAGE OUTLINE
2PC4617M series
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
SOT883
L
2
b
e
L1
3
b1
1
e1
A
A1
E
D
0
0.5
scale
1 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
(1)
0.50
0.46
A
1
max.
0.03
b
0.20
0.12
b
1
0.55
0.47
D
0.62
0.55
E
1.02
0.95
e
0.35
e
1
0.65
L
0.30
0.22
L
1
0.30
0.22
Note
1. Including plating thickness
OUTLINE
VERSION
SOT883
REFERENCES
IEC
JEDEC
JEITA
SC-101
EUROPEAN
PROJECTION
ISSUE DATE
03-02-05
03-04-03
2003 Jul 15
4
NXP Semiconductors
Product data sheet
NPN general purpose transistors
DATA SHEET STATUS
DOCUMENT
STATUS
(1)
Objective data sheet
Preliminary data sheet
Product data sheet
Notes
PRODUCT
STATUS
(2)
Development
Qualification
Production
DEFINITION
2PC4617M series
This document contains data from the objective specification for product
development.
This document contains data from the preliminary specification.
This document contains the product specification.
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
General
Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes
NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use
NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications
Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values
Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale
NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
No offer to sell or license
Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control
This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data
The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
2003 Jul 15
5
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参数对比
与2PC4617M相近的元器件有:2PC4617RM、2PC4617QM、2PC4617SM。描述及对比如下:
型号 2PC4617M 2PC4617RM 2PC4617QM 2PC4617SM
描述 NPN general purpose transistors NPN general purpose transistors NPN general purpose transistors NPN general purpose transistors
是否Rohs认证 - 符合 符合 符合
零件包装代码 - SC-101 SC-101 SC-101
包装说明 - CHIP CARRIER, R-PBCC-N3 CHIP CARRIER, R-PBCC-N3 CHIP CARRIER, R-PBCC-N3
针数 - 3 3 3
Reach Compliance Code - compli compli unknow
ECCN代码 - EAR99 EAR99 EAR99
外壳连接 - COLLECTOR COLLECTOR COLLECTOR
最大集电极电流 (IC) - 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 - 50 V 50 V 50 V
配置 - SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) - 180 120 270
JESD-30 代码 - R-PBCC-N3 R-PBCC-N3 R-PBCC-N3
JESD-609代码 - e3 e3 e3
元件数量 - 1 1 1
端子数量 - 3 3 3
最高工作温度 - 150 °C 150 °C 150 °C
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 - RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 - CHIP CARRIER CHIP CARRIER CHIP CARRIER
峰值回流温度(摄氏度) - 260 260 NOT SPECIFIED
极性/信道类型 - NPN NPN NPN
最大功率耗散 (Abs) - 0.43 W 0.43 W 0.43 W
认证状态 - Not Qualified Not Qualified Not Qualified
表面贴装 - YES YES YES
端子面层 - Tin (Sn) Tin (Sn) Matte Tin (Sn)
端子形式 - NO LEAD NO LEAD NO LEAD
端子位置 - BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 - 30 30 NOT SPECIFIED
晶体管应用 - SWITCHING SWITCHING SWITCHING
晶体管元件材料 - SILICON SILICON SILICON
标称过渡频率 (fT) - 100 MHz 100 MHz 100 MHz
Base Number Matches - 1 1 1
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