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st
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DATA SHEET
THYRISTORS
2S2M, 2S4M
2 A HIGH-SPEED SWITCHING SCR
The 2S2M and 2S4M are P-gate fully diffused mold SCRs
with an average on-current of 2 A. The repeat peak off-voltages
(and reverse voltages) are 200 V and 400 V.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• This transistor is designed for high-speed switching and is
deal for use in commercial frequencies, high-frequency pulse
applications, and inverter applications.
• This transistor features a small and lightweight package and
is easy to handle even on the mounting surface due to its
TO-202AA dimensions. Processing of lead wires and
heatsink (tablet) using jigs is also possible.
• Employs flame-retardant epoxy resin (UL94V-0).
APPLICATIONS
Consumer electronic euipments, ignitors of devices for light
indutry, inverter, and solenoid valve drives
Electrode connection
<1>Cathode
<2>Anode
<3>Gate
Standard weight: 1.4
*TC test bench-mark
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Non-repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak off-voltage
Average on-state current
Surge on-state current
High-frequency peak on-state current
Fusing current
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward current
Peak gate reverse voltage
Junction temperature
Storage temperature
Symbol
V
RSM
V
DSM
V
RRM
V
DRM
I
T(AV)
I
TSM
I
TRM
∫
i
t
dt
dI
T
/dt
P
GM
P
G(AV)
I
FGM
V
RGM
T
j
T
stg
2
2S2M
2S4M
Ratings
V
V
V
V
A
A
A
A
2
s
A/
µ
s
W
W
A
V
°C
°C
Unit
R
GK
= 1 kΩ
R
GK
= 1 kΩ
R
GK
= 1 kΩ
R
GK
= 1 kΩ
Refer to Figure 6 snd 7.
300
500
300
500
200
400
200
400
2 (Tc = 77°C, Single half-wave,
θ
= 180°)
20 (f = 50 Hz, Sine half-wave, 1 cycle)
15 (Tc = 65°C, f = 10 kp.p.s, t
p
= 10
µ
s)
1.6 (1 ms≤t≤10 ms)
50
0.5 (f≥50 Hz, Duty≤10%)
0.1
0.2 (f≥50 Hz, Duty≤10%)
6
−40
to +125
−55
tp +150
Refer to Figure 2.
−
−
−
−
−
−
−
−
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13535EJ2V0DS00 (2nf edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2S2M, 2S4M
ELECTRICAL CHARACTERISTICS (T
j
= 25°C, R
GK
= 1 kΩ)
°
Ω
Parameter
Symbol
Conditions
Specifications
MIN.
Repeat peak off-state
current
Repetitive peak reverse
current
On voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Critical rate of-rise of off-
state voltage
Holding current
Commutating turn-off time
I
DRM
V
DM
= V
DRM
T
j
= 25°C
T
j
= 125°C
I
RRM
V
RM
= V
RRM
T
j
= 25°C
T
j
= 125°C
V
TM
V
GT
I
GT
V
GD
d
V
/dt
T
j
= 25°C, I
TM
= 4 A
V
DM
= 6 V, R
L
= 100
Ω
V
DM
= 6 V, R
L
= 100
Ω
T
j
= 125°C, V
DM
=
1
V
DRM
2
T
j
= 125°C, V
DM
=
2
V
DRM
3
−
−
−
0.2
10
−
−
−
−
−
−
−
−
TYP.
MAX.
10
200
10
200
2.2
0.8
300
−
−
Unit
Remarks
µ
A
−
−
µ
A
V
V
−
Refer to Figure 1.
Refer to Figure 9.
Refer to Figure 8.
−
−
−
−
µ
A
V
V
V/
µ
s
I
H
T
q
T
j
= 25°C, V
D
= 24 V
T
j
= 125°C, I
T
= 2 A
V
DM
=
2
V
DRM
, V
R
= 50 V
3
d
V
/dt = 10 V/
µ
s
T
j
= 125°C, V
DM
=
2
V
DRM
3
I
TM
= 30 A
I
G
= 5 mA, t
1G
= 5
µ
s
10
15
mA
µ
s
Turn-on time
T
gt
−
−
2
µ
s
−
Thermal resistance
R
th(j-c)
R
th(j-a)
Junction-to-case DC
Junction-to-ambient DC
−
−
−
−
10
75
°C/W
Refer to Figure 13.
TYPICAL CHARACTERISTICS (Ta = 25°C)
°
2
Data Sheet D13535EJ2V0DS
2S2M, 2S4M
Data Sheet D13535EJ2V0DS
3
模拟电子
