JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TO-92L
2SA1013
TRANSISTOR
(PNP)
1.
EMITTER
FEATURE
High Voltage:V
CEO
=-160V
Large Continuous Collector Current Capability
Complementary to 2SC2383
2.
COLLECTOR
3.
BASE
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
-160
-160
-6
-1
0.9
150
-55 to +150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector Output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
Test
conditions
Min
-160
-160
-6
-1
-1
60
320
-1.5
-0.75
15
35
V
V
MHz
pF
Max
Unit
V
V
V
μA
μA
I
C
=- 100μA , I
E
=0
I
C
= -1mA , I
B
=0
I
E
= -10μA, I
C
=0
V
CB
=-150 V , I
E
=0
V
EB
=-6V, I
C
=0
V
CE
=-5 V, I
C
=- 200mA
I
C
= -500m A, I
B
= -50mA
I
C
= -5 mA, V
CE
=- 5V
V
CE
= -5 V, I
C
= -200mA
V
CB
=-10V, I
E
=0,f=1MHz
f
T
C
ob
CLASSIFICATION OF h
FE
Rank
Range
R
60-120
O
100-200
Y
160-320
A,Jun,2011
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