JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SA1145
TRANSISTOR (PNP)
TO-92MOD
1. EMITTER
FEATURES
Complementary to 2SC2705
Small
Collector Output Capacitance:
C
ob
=2.5pF(Typ.)
High
Transition Frequency:
f
T
=200MHz(Typ.)
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-150
-150
-5
-50
800
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
Test
conditions
Min
-150
-150
-5
-0.1
-0.1
80
240
-1
-0.8
200
2.5
V
V
MHz
pF
Typ
Max
Unit
V
V
V
μA
μA
I
C
=-100
μA,
I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100
μA,
I
C
=0
V
CB
=-150 V, I
E
=0
V
EB
=-5 V, I
C
=0
V
CE
=-5 V, I
C
=-10mA
I
C
=-10mA, I
B
=-1mA
V
CE
=-5 V, I
C
=-10mA
V
CE
=-5 V, I
C
=-10mA
V
CB
=-10 V, I
E
=0, f=1 MHz
CLASSIFICATION OF
Rank
Range
Marking
h
FE
O
80-160
Y
120-240
A,Jun,2011
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