JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SA1160
TRANSISTOR (PNP)
TO – 92M
TO – 92M
1. COLLECTOR
1. EMITTER
2. BASE
2. COLLECTOR
3. EMITTER
3. BASE
FEATURES
High DC Current Gain and Excellent h
FE
Linearity
Low Saturation Voltage
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-20
-10
-6
-2
900
139
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE
C
ob
f
T
Test
conditions
Min
-20
-10
-6
-0.1
-0.1
140
60
-0.5
-1.5
50
140
V
V
pF
MHz
600
Typ
Max
Unit
V
V
V
μA
μA
I
C
= -1mA,I
E
=0
I
C
=-10mA,I
B
=0
I
E
=-1mA,I
C
=0
V
CB
=-20V,I
E
=0
V
EB
=-6V,I
C
=0
V
CE
=-1V, I
C
=-0.5A
V
CE
=-1V, I
C
=-4A
I
C
=-2A,I
B
=-0.05A
V
CE
=-1V, I
C
=-2A
V
CB
=-10V,I
E
=0, f=1MHz
V
CE
=-1V,I
C
=-0.5A
CLASSIFICATION OF h
FE(1)
RANK
RANGE
A
140-280
B
200-400
C
300-600
A,Dec,2010
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