JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
2SA1585S
FEATURES
TRANSISTOR (PNP)
TO-92S
1. EMITTER
Low V
CE(sat)
.
Excellent DC current gain characteristics.
Power dissipation
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Value
-20
-20
-6
-2
400
150
-55-150
Unit
V
V
V
A
mW
℃
℃
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CEsat
Test
conditions
Min
-20
-20
-6
-0.1
-0.1
120
560
-0.5
200
V
MHz
Typ
Max
Unit
V
V
V
μA
μA
I
C
= -50μA , I
E
=0
I
C
= -1mA , I
B
=0
I
E
=- 50μA, I
C
=0
V
CB
=-20V ,
I
E
=0
V
EB
= -5V , I
C
=0
V
CE
=-2V,
I
C
= -0.1A
I
C
= -2A, I
B
=-0.1A
V
CE
=-2V, I
C
=-0.5A
F=100MHz
f
T
CLASSIFICATION OF h
FE
Rank
Range
Q
120-170
R
180-390
s
270-560
A,Jun,2011
电子工程世界
