JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251/TO-252-2L Plastic-Encapsulate Transistors
2SA1700
TRANSISTOR (PNP)
TO-251
TO-252-2L
123
1.BASE
FEATURES
High breakdown voltage
Adoption of MBIT process
Excellent h
FE
linearity
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-400
-400
-5
-0.2
1
150
-55-150
Units
V
V
V
A
W
℃
℃
2.COLLECTOR
3.EMITTER
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base- emitter saturation voltage
Transition frequency
Output Capacitance
Reverse Transfer Capacitance
Turn-on Time
Turn-off Time
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
C
re
t
on
t
off
unless
Test
otherwise
specified)
MIN
-400
-400
-5
-0.1
-0.1
60
200
-0.8
-1
70
5
4
0.25
V
V
MHz
pF
pF
µS
µS
TYP
MAX
UNIT
V
V
V
µA
µA
conditions
I
C
=-10µA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-10µA,I
C
=0
V
CB
=-300V,I
E
=0
V
EB
=-4V,I
C
=0
V
CE
=-10V,I
C
=-50mA
I
C
=-50mA,I
B
=-5mA
I
C
=-50mA,I
B
=-5mA
V
CE
=-30V,I
C
=-10mA
V
CB
=-30V,f=1MHz
V
CB
=-30V,f=1MHz
V
CC
=-150V,I
B1
=I
B2
=-5mA,R
L
=3KΩ
5
CLASSIFICATION OF
Rank
Range
h
FE
D
60-120
E
100-200
Typical Characteristics
2SA1700
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