JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92
2SA1980
FEATURES
Plastic-Encapsulate Transistors
TRANSISTOR (
PNP)
TO-92
Low collector saturation voltage: V
CE(sat)
=-0.3V(Max.)
Low output capacitance : C
ob
=4pF (Typ.)
Complementary pair with 2SC5343
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
-50
-50
-5
-150
625
150
-55-150
1 2 3
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
NF
Test
conditions
MIN
-50
-50
-5
-0.1
-0.1
70
700
-0.3
80
4
7
10
V
MHz
pF
dB
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=-100μA,I
E
=0
I
C
=-10mA,I
B
=0
I
E
=-10μA,I
C
=0
V
CB
=-50V,I
E
=0
V
EB
=-5V,I
C
=0
V
CE
=-6V,I
C
=-2mA
I
C
=-100mA,I
B
=-10mA
V
CE
=-10V,I
C
=-1mA
V
CB
=-10V,I
E
=0,f=1MHz
V
CE
=-6V,I
C
=-0.1mA,f=1KH
Z
,R
S
=10KΩ
CLASSIFICATION OF
Rank
Range
h
FE
O
70-140
Y
120-240
G
200-400
L
300-700
Typical Characteristics
2SA1980
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