JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO-92
2SA562
TRANSISTOR (PNP)
FEATURES
Excellent h
FE
Linearlity
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
-35
-30
-5
-500
500
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
Test
conditions
Min
-35
-30
-5
-0.1
-0.1
70
240
-0.25
-1
200
13
V
V
MHz
pF
Typ
Max
Unit
V
V
V
μA
μA
I
C
= -100μA , I
E
=0
I
C
= -1mA , I
B
=0
I
E
= -100μA, I
C
=0
V
CB
=-35V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
=-1V, I
C
=-100mA
I
C
= -100mA, I
B
= -10mA
V
CE
=-1V,I
C
=-100mA
V
CE
= -6V, I
C
= -20mA
V
CB
=-
6
V,I
E
=0,f=
1
MHz
CLASSIFICATION OF h
FE
RANK
RANGE
O
70-140
Y
120-240
,2011
Typical Characteristics
Static Characteristic
-120
2SA562
h
FE
1000
——
I
C
COMMON EMITTER
T
a
=25
℃
-0.80mA
-0.72mA
(mA)
-0.64mA
-80
I
C
-0.56mA
-0.48mA
-0.40mA
-0.32mA
COLLECTOR CURRENT
DC CURRENT GAIN
h
FE
T
a
=100
℃
100
T
a
=25
℃
-40
-0.24mA
-0.16mA
I
B
=-0.08mA
COMMON EMITTER
V
CE
=-1V
10
-1.5
-1
-10
-100
-500
-0
-0.0
-0.5
-1.0
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
CEsat
-300
—— I
C
V
BEsat
-1200
—— I
C
β=10
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
-100
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
-1000
-800
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
-600
-400
-10
-1
-10
-100
-500
-200
-1
-10
-100
-500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
-500
—— V
BE
100
C
ob
/ C
ib
——
V
CB
/ V
EB
f=1MHz
I
E
=0 / I
C
=0
COMMON EMITTER
V
CE
=-1V
C
ib
(pF)
C
ob
10
(mA)
T
a
=25
℃
-100
I
C
COLLCETOR CURRENT
T
a
=100
℃
-10
T
a
=25
℃
-1
-200
CAPACITANCE
-1000
-1200
C
-400
-600
-800
1
-0.1
-1
-10
-20
BASE-EMMITER VOLTAGE
V
BE
(mV)
REVERSE VOLTAGE
V
(V)
1000
f
T
—— I
C
625
P
C
——
T
a
(MHz)
COLLECTOR POWER DISSIPATION
P
C
(mW)
-100
500
TRANSITION FREQUENCY
f
T
375
100
250
COMMON EMITTER
V
CE
= -6V
T
a
=25
℃
10
-10
125
0
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
,2011
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