JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SA608
TRANSISTOR (PNP)
FEATURES
Capable of being used in the low frequency to high
frequency range.
Large current capacity and wide ASO.
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-40
-30
-5
-100
400
150
-55-150
Units
V
V
V
mA
mW
℃
℃
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Test
conditions
MIN
-40
-30
-5
-1
-1
60
560
-0.5
180
7
V
MHz
pF
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=-100μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100μA, I
C
=0
V
CB
=-25V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-6V, I
C
=-1mA
I
C
=-50mA, I
B
=-5mA
V
CE
=-6V, I
C
=-10mA
V
CB
=-6V, f=1MHz
CLASSIFICATION OF
Rank
Range
h
FE
D
60-120
E
100-200
F
160-320
G
280-560
Typical Characteristics
2SA608
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