JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SA812
SOT-23
Unit : mm
TRANSISTOR (PNP)
1. BASE
FEATURES
Complementary to 2SC1623
High DC Current Gain: h
FE
=200 TYP.(V
CE
=-6V,I
C
=-1mA)
High Voltage: V
ceo
=-50V
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-60
-50
-5
-100
200
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
Test conditions
I
C
=-100
μ
A, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -100
μ
A, I
C
=0
V
CB
=- 60 V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
=- 6V, I
C
= -1mA
I
C
=-100mA, I
B
= -10mA
I
C
=-1mA, V
CE
=-6V
V
CE
=-6V,
I
C
= -10mA
-0.58
180
4.5
90
Min
-60
-50
-5
-0.1
-0.1
600
-0.3
-0.68
V
V
MHz
pF
Typ
Max
Unit
V
V
V
μ
A
μ
A
f
T
C
ob
V
CB
=-10V,I
E
=0,f=1MHz
CLASSIFICATION OF h
FE
Rank
Range
Marking
M4
90-180
M4
M5
135-270
M5
M6
200-400
M6
M7
300-600
M7
A,May,2011
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