JMnic
Product Specification
Silicon PNP Power Transistors
2SA877 2SA878
DESCRIPTION
・With
TO-3 package
・High
power dissipation
APPLICATIONS
・Power
amplifier applications
・Recommended
for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2SA877
V
CBO
Collector-base voltage
2SA878
2SA877
V
CEO
Collector-emitter voltage
2SA878
V
EBO
I
C
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
-120
-6
-10
100
150
-55~150
V
A
W
℃
℃
Open emitter
-120
-80
V
CONDITIONS
VALUE
-80
V
UNIT
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SA877
V
(BR)CEO
Collector-emitter
breakdown voltage
2SA878
V
(BR)EBO
V
CEsat
Emitter-base breakdown voltage
Collector-emitter saturation voltage
2SA877
I
CBO
Collector cut-off current
2SA878
I
EBO
h
FE
C
OB
f
T
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
V
CB
=-120V; I
E
=0
V
EB
=-6V; I
C
=0
I
C
=-3A ; V
CE
=-4V
I
E
=0 ; V
CB
=-10V; f=1.0MHz
I
C
=-1A ; V
CE
=-12V
I
E
=-1mA ;I
C
=0
I
C
=-5A; I
B
=-0.5A
V
CB
=-80V; I
E
=0
I
C
=-0.1A ;I
B
=0
CONDITIONS
2SA877 2SA878
MIN
-80
TYP.
MAX
UNIT
V
-120
-6
-2.0
V
V
-0.1
mA
-0.1
50
255
15
mA
pF
MHz
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA877 2SA878
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
模拟与混合信号
