SMD Type
PNP Transistors
2SB1119
Transistors
■
Features
●
Very small size making it easy to provide high
1.70
0.1
highdensity, small-sized hybrid IC’s.
●
Complementary to 2SD1619
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
Collector Power Dissipation
(Note.1)
Junction Temperature
Storage Temperature range
Note.1: Mounted on ceramic board (250mm
2
×0.8mm)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
stg
Rating
-25
-25
-5
-1
-2
0.5
1.3
150
-55 to 150
A
W
V
Unit
℃
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
C
ob
f
T
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -1 mA， R
BE
=∞
I
E
= -100μA， I
C
=0
V
CB
= -20V , I
E
=0
V
EB
= -4V , I
C
=0
I
C
=-500 mA, I
B
=-50mA
I
C
=-500 mA, I
B
=-50mA
V
CE
= -2V, I
C
= -50 mA
V
CE
= -2V, I
C
= -1 A
V
CB
= –10V, I
E
= 0, f = 1MHz
V
CE
= -10V, I
C
= -50mA
100
40
25
180
pF
MHz
-0.15
-0.85
Min
-25
-25
-5
-0.1
-0.1
-0.7
-1.2
560
uA
V
V
Typ
Max
Unit
■
Classification of h
fe(1)
Type
Range
Marking
2SB1119-R
100-200
BB R*
2SB1119-S
140-280
BB S*
2SB1119-T
200-400
BB T*
2SB1119-U
280-560
BB U*
www.kexin.com.cn
1
SMD Type
PNP Transistors
2SB1119
■
Typical Characterisitics
Transistors
2
www.kexin.com.cn
SMD Type
PNP Transistors
2SB1119
■
Typical Characterisitics
Transistors
www.kexin.com.cn
3
