JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
2SB1185
TRANSISTOR (PNP)
TO-220F
FEATURES
Low V
CE(sat)
: V
CE(sat)=
-0.5V(Typ)(
I
C
/I
B
=
-2
A/
-0.2
A)
MAXIMUM RATINGS* T
a
=25
℃
unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Junction Junction
Storage Junction
Value
-60
-60
-5
-3
150
-55-150
Unit
V
V
V
A
℃
℃
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (T
a
=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
unless
Test
otherwise
conditions
specified)
Min
Typ
Max
Unit
V
V
V
I
C
=
-50
µA,
I
E
=0
I
C
=
-1
mA, I
B
=0
I
E
=
-50
µA,
I
C
=0
V
CB
=
-40
V, I
E
=0
V
EB
=
-4
V, I
C
=0
V
CE
=
-3
V, I
C
=
-0.5
A
I
C
=
-2
A, I
B
=
-0.2
A
I
C
=
-2
A, I
B
=
-0.2
A
V
CE
=
-5
V, I
C
=
-0.5
A, f=
30
MHz
V
CB
=-10V, I
E
=0, f=
1
MHz
-60
-50
-5
-1
-1
60
320
-1
-1.5
70
50
µA
µA
V
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF
Rank
Range
Marking
h
FE
D
60-120
E
100-200
F
160-320
A,Sep,2011
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