JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate Transistors
2SB1197K
TRANSISTOR (PNP)
FEATURES
Power dissipation
P
CM
:
200 mW (Tamb=25℃)
SOT-23-3L
1.
BASE
2.
EMITTER
3.
COLLECTOR
1. 02
Collector current
I
CM
:
-800 mA
Collector-base voltage
V
(BR)CBO
: -40 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
0.
0. 95¡ À 025
2. 80¡ À 05
0.
1. 60¡ À0. 05
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE
(sat)
f
T
Cob
unless otherwise specified)
Test
conditions
MIN
-40
-32
-5
-0.5
-0.5
82
390
-0.5
50
200
12
30
V
MHz
pF
TYP
MAX
UNIT
V
V
V
µA
µA
Ic=-50µA, I
E
=0
Ic=-1mA, I
B
=0
I
E
=-50µA, I
C
=0
V
CB
=-20V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-3V, I
C
=-100mA
I
C
=-0.5A, I
B
=-50mA
V
CE
=-5V, I
C
=-50mA
f=100MHz
V
CE
=-10V, I
C
=0
f=1MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
P
82-180
AHP
Q
120-270
AHQ
R
180-390
AHR
0. 35
2. 92¡ À0. 05
1. 9
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