JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251/TO-252-2Plastic-Encapsulate Transistors
2SB1202
TO-251
TO-252-2
TRANSISTOR (PNP)
FEATURES
Adoption of FBET,MBIT processes
Large current capacity and wide ASO
Low collector-to-emitter saturation voltage
Fast switching speed
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-60
-50
-6
-3
1
150
-55-150
Units
V
V
V
A
W
℃
℃
1.
BASE
2.
COLLECTOR
3.
EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
unless
Test
otherwise
conditions
specified)
MIN
TYP
MAX
UNIT
V
V
V
Ic=
-100
µA,
I
E
=0
Ic=
-1
mA, I
B
=0
I
E
=
-100
µA,
I
C
=0
V
CB
=-
40
V, I
E
=0
V
EB
=
-4
V, I
C
=0
V
CE
=
-2
V, I
C
=
-100
mA
V
CE
=
-2
V, I
C
=
-3
A
I
C
=
-2
A, I
B
=
-100
mA
V
CE
=
-10
V, I
C
=
-50
mA
V
CB
=
-10
V, I
E
=0, f=
1
MHz
-60
-50
-6
-1
-1
100
35
-0.7
150
39
560
µA
µA
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF
Rank
Range
h
FE(1)
R
100-200
S
140-280
T
200-400
U
280-560
Typical Characteristics
2SB1202
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